Measurement of electron temperatures and electron energy distribution functions in dual frequency capacitively coupled CF4/O2 plasmas using trace rare gases optical emission spectroscopy

Chen, Zhiying; Donnelly, Vincent M.; Economou, Demetre J.; Chen, Lee; Funk, Merritt; Sundararajan, Radha

doi:10.1116/1.3179162

Cited by 34 publications

(19 citation statements)

References 30 publications

(34 reference statements)

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“…The evolution of EEPFs in this paper is quite different from the results of the approximate EEDFs in an 80%CF 4 þ 20%O 2 plasma (60/13.56 MHz DF-CCP) 10 which were obtained by TRG-OES. The results given by Chen et al 10 showed that the EEDF exhibited a bi-Maxwellian character with an enhanced high energy tail, especially above 20 mTorr, while the Druyvesteyn distribution was obtained at high pressure in this paper. This partly could be due to the different chemical characterization of CF 4 /O 2 and argon gas.…”

Section: -3contrasting

confidence: 95%

“…This partly could be due to the different chemical characterization of CF 4 /O 2 and argon gas. However, it is hard to compare the EEDFs obtained by Chen et al 10 and that in this paper. One reason is that the measuring of EEDFs is different: the Langmuir probe technique was used in this paper, while TRG-OES technique was used by Chen et al, 10 so, only the approximate EEDFs were obtained by them.…”

Section: -3mentioning

confidence: 67%

“…The experimental results show that the control of ion energy is best achieved by varying low-frequency power. Using trace rare gas optical emission spectroscopy (TRG-OES), Chen et al 10 measured the electron temperatures (T e ) and approximate electron energy distribution functions (EEDFs) in 60/13.56 MHz DF-CCP (CF 4 /O 2 ). The role of low-frequency power in DF-CCP was studied by Ahn and Chang.…”

Section: Introductionmentioning

confidence: 99%

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Effects of gas pressure on 60/13.56 MHz dual-frequency capacitively coupled plasmas

Yuan

Yin

et al. 2011

Physics of Plasmas

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The electron energy probability functions (EEPFs) were measured with increasing gas pressure in 60/13.56 MHz dual-frequency capacitively coupled plasma (DF-CCP) using compensated Langmiur electrostatic probe. The transition pressure of heating mode from collisionless to collisional heating in 60/13.56 MHz DF-CCP is found to be significantly lower than that in 13.56 MHz single-frequency CCP. As the pressure increases, the EEPFs change from bi-Maxwellian to Druyvesteyn type which is similar with that in 60 MHz single-frequency CCP. The pressure dependence of electron densities, effective electron temperatures, floating potentials, and plasma potentials in 60/13.56 MHz DF-CCP were measured and were compared with that in 60 MHz single-frequency CCP. The pressure dependence of these plasma parameters in 60/13.56 MHz DF-CCP is similar with that in 60 MHz single-frequency CCP.

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Section: -3contrasting

confidence: 95%

Section: -3mentioning

confidence: 67%

Section: Introductionmentioning

confidence: 99%

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Effects of gas pressure on 60/13.56 MHz dual-frequency capacitively coupled plasmas

Yuan

Yin

et al. 2011

Physics of Plasmas

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“…If we assume that the atomic fluorine density directly depends on I(F), this shows that a relationship exists between the density of the atomic fluorine and the SiN :H etch rate. In fact, a number of recent studies have produced similar results to utilize a relation between the OES intensity and plasma density [26][27][28].…”

Section: Discussion When Sin :H Film Is Etched Using Fluorinebased Gmentioning

confidence: 90%

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF₃/O₂and SF₆/O₂

Park

Lee

et al. 2014

Advances in Materials Science and Engineering

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The characteristics of the dry etching of SiN :H thin films for display devices using SF 6 /O 2 and NF 3 /O 2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For the SiN :H film, the etch rates obtained using NF 3 /O 2 were higher than those obtained using SF 6 /O 2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters-the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltages and -were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine ( (F)) and the square root of the voltages (√ ℎ + ) on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

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“…For control of the plasma characteristics as required for nanoscale semiconductor device processing, various plasma sources including capacitively coupled plasma (CCP) sources and inductively coupled plasma (ICP) sources have been widely investigated. [1][2][3][4][5][6] CCP sources are known to have excellent plasma uniformity while having low plasma density of about a few 10 10 /cm 3 , in addition to low gas dissociation characteristics. In contrast, ICP sources are known to have less plasma uniformity while having high plasma density, which is above 10 11 /cm 3 , along with high gas dissociation characteristics.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of pulsed dual frequency inductively coupled plasma

Seo

Kim

et al. 2014

Jpn. J. Appl. Phys.

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To control the plasma characteristics more efficiently, a dual antenna inductively coupled plasma (DF-ICP) source composed of a 12-turn inner antenna operated at 2 MHz and a 3-turn outer antenna at 13.56 MHz was pulsed. The effects of pulsing to each antenna on the change of plasma characteristics and SiO 2 etch characteristics using Ar/C 4 F 8 gas mixtures were investigated. When the duty percentage was decreased from continuous wave (CW) mode to 30% for the inner or outer ICP antenna, decrease of the average electron temperature was observed for the pulsing of each antenna. Increase of the CF 2 /F ratio was also observed with decreasing duty percentage of each antenna, indicating decreased dissociation of the C 4 F 8 gas due to the decreased average electron temperature. When SiO 2 etching was investigated as a function of pulse duty percentage, increase of the etch selectivity of SiO 2 over amorphous carbon layer (ACL) was observed while decreasing the SiO 2 etch rate. The increase of etch selectivity was related to the change of gas dissociation characteristics, as observed by the decrease of average electron temperature and consequent increase of the CF 2 /F ratio. The decrease of the SiO 2 etch rate could be compensated for by using the rf power compensated mode, that is, by maintaining the same time-average rf power during pulsing, instead of using the conventional pulsing mode. Through use of the power compensated mode, increased etch selectivity of SiO 2 /ACL similar to the conventional pulsing mode could be observed without significant decrease of the SiO 2 etch rate. Finally, by using the rf power compensated mode while pulsing rf powers to both antennas, the plasma uniformity over the 300 mm diameter substrate could be improved from 7% for the CW conditions to about around 3.3% with the duty percentage of 30%.

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Measurement of electron temperatures and electron energy distribution functions in dual frequency capacitively coupled CF4/O2 plasmas using trace rare gases optical emission spectroscopy

Cited by 34 publications

References 30 publications

Effects of gas pressure on 60/13.56 MHz dual-frequency capacitively coupled plasmas

Effects of gas pressure on 60/13.56 MHz dual-frequency capacitively coupled plasmas

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF₃/O₂and SF₆/O₂

Characteristics of pulsed dual frequency inductively coupled plasma

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Measurement of electron temperatures and electron energy distribution functions in dual frequency capacitively coupled CF4/O2 plasmas using trace rare gases optical emission spectroscopy

Cited by 34 publications

References 30 publications

Effects of gas pressure on 60/13.56 MHz dual-frequency capacitively coupled plasmas

Effects of gas pressure on 60/13.56 MHz dual-frequency capacitively coupled plasmas

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2

Characteristics of pulsed dual frequency inductively coupled plasma

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A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF₃/O₂and SF₆/O₂