Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon

A New Solution for Minority-Carrier Injection into the Heavily Doped Emitter of Silicon Devices

“…2. Plots of bounded functions vs. xaW: curve 1 represents R c y; curves 2 and 3 represent jDJ SY 0 yjaJ SY 1 y, obtained for S S 1 and S 2 , respectively reported the numerical results obtained using other models for minority-hole (electron) mobility [23,24] and majority-electron (hole) mobility [20], respectively.…”

Modelling for the current-voltage characteristics of SOI submicrometre gate controlled hybrid transistors

“…where D n is the electron diOE usion coe cient (Swirhun et al 1986), t si is the silicon ® lm thickness and y d is the depth of depletion region under the gate and can be approximated by …y de ‡ y dc †=2.…”

“…where ¬ is a ® tting parameter and usually chosen as 0:025 mm V ¡1 , and · 0 …N † is doping-dependen t low ® eld mobility (Swirhun 1986). For nMOSFET, the average eOE ective ® eld E ef f can be given by (Ko 1989)…”

“…I b4 is the recombination current induced by the surface states of the oxide/silicon interface. The calculation formulae for the four components can be referred to (Chou 1974, Alamo et al 1985, Swirhun et al 1986, where the junction depth is substituted with the silicon ® lm thickness.…”

Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method

“…In this way, recombination lifetime models have been developed. These models are based on high dopant concentration [1] (around 1x10 17 at.cm -3 ) or on moderate dopant concentration [2,3] (from 1x10 14 at.cm -3 ). However, these analytical models are unsuitable for 2D/3D photodiode structures with various doping layers such as the one used in CMOS image sensors (Fig.…”