Measurement of channeling radiation using a 45 MeV betatron

Buschhorn, G.; Diedrich, E.; Kufner, W.; Pollmann, D.

doi:10.1016/0168-583x(88)90074-2

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…Interest to the channeling radiation of the electrons was amplified after the idea about a possibility of its application as intensive and easily tunable source quasi monoenergetic X-ray and gamma radiation [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] and also as the positrons source for the linear supercolliders [16].…”

Section: Introductionmentioning

confidence: 99%

“…At energy range of electrons 10...100 MeV systematic experimental study of gamma radiation spectra at the electrons plane channeling was performed, generally on C and Si single crystals. The gamma radiation spectra from Be crystal are given in paper [12]. The main attention was paid to optimization of the yield and the spectral line width of the gamma radiation [2,11] and [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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GAMMA-RADIATION SPECTRA OF 1200 MeV ELECTRONS IN THICK BERYLLIUM, SILICON AND TUNGSTEN SINGLE CRYSTALS

Bochek¹,

Deiev²,

Kulibaba³

et al. 2019

Problems of Atomic Science and Technology

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Gamma radiation spectra of 1200 MeV electrons from the single crystals of the beryllium 1.2 mm thick, silicon 1.5 mm and 15 mm thick and tungsten 1.18 mm thick along of the crystallographic axes were measured. Also spectral-angular distributions of gamma radiation from the silicon single crystals 1.5 mm thick along of the crystallographic axes < 100 >, < 110 > and < 111 > were measured. On the basis of these measurements the γ-radiation spectra for the different solid angles up to 6.97 × 10−6 sr were obtained.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GAMMA-RADIATION SPECTRA OF 1200 MeV ELECTRONS IN THICK BERYLLIUM, SILICON AND TUNGSTEN SINGLE CRYSTALS

Bochek¹,

Deiev²,

Kulibaba³

et al. 2019

Problems of Atomic Science and Technology

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Measurement of Planar Channeling Radiation from 19.2 MeV Electrons in Silicon Using a Microtron

Poturaev

Kumakhov

Ognev

et al. 1993

Physica Status Solidi (b)

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An experimental set-up for studying radiation of channeled relativistic electrons in single crystals is designed. The source of electrons is a 19.2 MeV microtron. With the help of a mirror-symmetric achromatic magnetic system a beam of electrons with an angular divergence less than 0.3 mrad is transported to a single crystal target. The measured radiation spectra at planar channeling of 19.2 MeV electrons in silicon single crystals 3,7, and 18 pm thick are presented and compared with the calculated spectra. Theoretical calculations are based on a newly developed method using a complex potential for describing the line broadening.Eine experimentelle Anordnung fur die Untersuchung der Channeling-Strahlung von relativistischen Elektronen wird aufgebaut. Ein Mikrotron dient als Quelle von 19.2 MeV Elektronen. Die Elektronen werden mit einem spiegelsymmetrischen, achromatischen Magnetsyslem Lum einkristallinen Target transportiert. Die MeDergebnisse fur Siliziumeinkristalle der Dicken 3, 7 und 18 pm werden unter den Bedingungen des planaren Channeling erhalten und mit der Theorie verglichen. Die theoretische Rechnung wird mit Hilfe einer neuen Methode unter Verwendung eines komplexen Potentials fur dic Beschreibung der Linienbreiten durchgefuhrt.

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