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1998
DOI: 10.1016/s0168-583x(98)00267-5
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Measurement of bulk etch rate of CR-39 with atomic force microscopy

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Cited by 45 publications
(19 citation statements)
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“…The alpha source employed in the present study was a planar 241 Am source (main alpha energy = 5.49 MeV under vacuum) with an activity of 4.26 kBq. After irradiation, the bottom side of the cell dishes was etched by 14 N KOH solution at 37 • C (corresponding to a bulk etch rate of 0.64 ± 0.01 m/h determined by the masking method, Ho et al, 2003;Yasuda et al, 1998) for 3 h 40 min to reveal the tracks. These tracks were used as markers for alignment only, and are referred to as "base tracks".…”
Section: Markers For Alignment Of Imagesmentioning
confidence: 99%
“…The alpha source employed in the present study was a planar 241 Am source (main alpha energy = 5.49 MeV under vacuum) with an activity of 4.26 kBq. After irradiation, the bottom side of the cell dishes was etched by 14 N KOH solution at 37 • C (corresponding to a bulk etch rate of 0.64 ± 0.01 m/h determined by the masking method, Ho et al, 2003;Yasuda et al, 1998) for 3 h 40 min to reveal the tracks. These tracks were used as markers for alignment only, and are referred to as "base tracks".…”
Section: Markers For Alignment Of Imagesmentioning
confidence: 99%
“…The bulk etch rate of the CR-39 SSNTDs was measured by the masking method [5,6]. CR-39 SSNTDs of dimensions 1 · 1 · 0.1 cm (thickness) were prepared.…”
Section: Preparation Of Thin Cr-39 Detectorsmentioning
confidence: 99%
“…After irradiated by the 1 MeV alpha particles, the bottom side of the cell dishes was etched by 14 N KOH solution at 37°C (corresponding to a bulk etch rate of 0.64 ± 0.01 lm/h determined by the masking method [13,14]) for 3 h 40 min. Such a low-etching temperature was chosen to prevent the epoxy from being dissolved in the strong etchant at high-temperatures.…”
Section: Generation Of Base Tracks On the Padc Cell Dishesmentioning
confidence: 99%