Measurement of area density of vertically aligned carbon nanotube forests by the weight-gain method

Esconjauregui, Santiago; Xie, Rongsi; Fouquet, Martin; Cartwright, Richard; Hardeman, David; Yang, Junwei; Robertson, John

doi:10.1063/1.4799417

Cited by 52 publications

(39 citation statements)

References 36 publications

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“…For example, vertically aligned CNT growth is achieved for 50 and 100 nm TiN films at 350 °C, whereas short and tangled CNT growth is achieved for 150 and 200 nm TiN films. Furthermore, the nanotube density grown at 400°C is estimated to be 2 × 10 10 and 8 × 10 10 cm −2 for 50 nm TiN and 100 nm TiN films, respectively, using the weight gain method described by Esconjauregui et al (detail given in the Supporting Information). The CNT growth profile for the two parameters, temperature and the thickness of the TiN layer, is summarized in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ahmad

Anguita

Stolojan

et al. 2015

Adv Funct Materials

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Keywords: nanomaterials, carbon nanotubes, photothermal chemical vapor deposition, low temperature growth 2 For carbon nanotubes (CNTs) to be exploited in electronic applications the growth of high quality material on conductive substrates at low temperatures (< 450 o C) is required. CNT quality is known to be strongly degraded when growth is conducted on metallic surface at low temperatures using conventional chemical vapor deposition (CVD). Here, we demonstrate production of high quality vertically-aligned CNTs at low substrate temperatures (350 -440 o C) on conductive TiN thin film using photo-thermal CVD by confining the heat required for growth to just the catalyst using an array of optical lamps and by optimizing the thickness of the TiN under-layer. The thickness of the TiN plays a crucial role in determining various properties including diameter, material quality, number of shells and metallicity. The highest structural quality with a visible Raman D-to G-band intensity ratio as low as 0.13 is achieved for 100 nm TiN thickness grown at 420 o C; a record low value for low temperature CVD grown CNTs. Electrical measurements of high density CNT arrays show the resistivity to be 1.25×10 -2 Ωcm represents some of the lowest values reported. Finally, the broader aspects of using this approach as a scalable technology for carbon nanomaterial production are also discussed.3

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Section: Resultsmentioning

confidence: 99%

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ahmad

Anguita

Stolojan

et al. 2015

Adv Funct Materials

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“…In addition to their physical dimensions (length and diameter), the density of CNT channels also dictates the permeability of the final composite membrane. We quantified the density of CNT pores in our material using three different methods (see the Supporting Information): the weight gain method and synchrotron X‐ray attenuation measurements give the total number of CNTs in the forest before parylene infiltration, whereas KCl diffusion studies quantify the CNT channels open to fluid flow in the composite membrane. The three techniques agree closely, with CNT densities averaging 5.2 × 10 11 , 5.1 × 10 11 , and 6.5 × 10 11 CNT cm −2 for weight gain, X‐ray attenuation, and KCl diffusion, respectively.…”

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confidence: 99%

Ultrabreathable and Protective Membranes with Sub‐5 nm Carbon Nanotube Pores

et al. 2016

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“…Atomic force microscope (AFM) is used to reveal the surface morphology of the sample surface. The area density is measured by the weight-gain method 37 …”

Section: Methodsmentioning

confidence: 99%

Increased carbon nanotube area density after catalyst generation from cobalt disilicide using a cyclic reactive ion etching approach

Xie

Zhang

Chen

et al. 2014

Journal of Applied Physics

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We used a cyclic reactive ion etching (RIE) process to increase the Co catalyst density on a cobalt disilicide (CoSi2) substrate for carbon nanotube (CNT) growth. Each cycle of catalyst formation consists of a room temperature RIE step and an annealing step at 450 °C. The RIE step transfers the top-surface of CoSi2 into cobalt fluoride; while the annealing reduces the fluoride into metallic Co nanoparticles. We have optimized this cyclic RIE process and determined that the catalyst density can be doubled in three cycles, resulting in a final CNT shell density of 6.6 × 1011 walls·cm−2. This work demonstrates a very effective approach to increase the CNT density grown directly on silicides.

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Measurement of area density of vertically aligned carbon nanotube forests by the weight-gain method

Cited by 52 publications

References 36 publications

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ultrabreathable and Protective Membranes with Sub‐5 nm Carbon Nanotube Pores

Increased carbon nanotube area density after catalyst generation from cobalt disilicide using a cyclic reactive ion etching approach

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