2012
DOI: 10.1103/physrevlett.108.177006
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Measurement of a Superconducting Energy Gap in a Homogeneously Amorphous Insulator

Abstract: We present tunneling spectroscopy measurements that directly reveal the existence of a superconducting gap in the insulating state of homogenously disordered amorphous indium oxide films. Two films on both sides of the disorder induced superconductor to insulator transition show the same energy gap scale. This energy gap persists up to relatively high magnetic fields and is observed across the magnetoresistance peak typical of disordered superconductors. The results provide useful information for understanding… Show more

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Cited by 67 publications
(78 citation statements)
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References 38 publications
(44 reference statements)
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“…The superconducting transition temperature T c , however, does decrease with increasing disorder and vanishes at a critical disorder, signaling a superconductor-insulator transition (SIT). These theoretical predictions are supported by scanning-tunneling-spectroscopy experiments [11][12][13][14] and by magnetoresistance oscillations [6] in disordered thin films.…”
Section: Introductionsupporting
confidence: 57%
“…The superconducting transition temperature T c , however, does decrease with increasing disorder and vanishes at a critical disorder, signaling a superconductor-insulator transition (SIT). These theoretical predictions are supported by scanning-tunneling-spectroscopy experiments [11][12][13][14] and by magnetoresistance oscillations [6] in disordered thin films.…”
Section: Introductionsupporting
confidence: 57%
“…Other tunneling measurements on insulating InO x films confirmed that the gap persists [17]. Earlier electron transport experiments on films near the SIT revealed a giant magnetoresistance (MR) peak larger than expected for any known single electron transport mechanism [18,[32][33][34].…”
mentioning
confidence: 87%
“…The most prominent theories that can account for these behaviors view the SIT as a Cooper pair or boson localization transition, rather than a Cooper pair breaking transition [9][10][11][12][13][14]. Recent experiments that probe films near the SIT in new ways have provided more details that support this "bosonic" picture of the SIT [15][16][17][18][19]. For example, scanning tunneling microscopy (STM) has revealed that spatial inhomogeneities develop in the order parameter on approaching the SIT suggesting that Cooper pairs localize into islands [19,20].…”
mentioning
confidence: 99%
“…Nanowires are strongly disordered, sometimes even being on the edge of a superconductor-insulator transition. Spectral and transport properties of strongly disordered superconductors on the edge of a superconductor-insulator transition are currently a topic of great interest both from experimental and theoretical points of view [10][11][12] . The transition is driven by the increase in the number of incoherent pairs at the expense of the ones that participate in the condensate.…”
Section: Hotspot In a Current-carrying Superconducting Nanowirementioning
confidence: 99%