Measurement of a complete HV IGBT I-V-characteristic up to the breakdown point

Basler, Thomas; Bhojani, Riteshkumar; Lutz, Josef; Jakob, R. P.

doi:10.1109/epe.2013.6634454

Cited by 11 publications

(9 citation statements)

References 10 publications

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“…The ΔT SC during the SC was calculated using (1) by assuming homogeneous temperature distribution throughout the chip and due to the short pulse duration, no heat flow out of the chip [13]. To extract the I-V curve from the SC waveforms, the measurement points were taken when V CE and V GE reach to a steady state [19], as shown by a vertical dashed line in both pictures. The measured I C -V CE characteristics of the IGBT are shown in Figs.…”

Section: Measurement Of Igbt I-v Characteristicsmentioning

confidence: 99%

Al modification as indicator of current filaments in IGBTs under repetitive SC operation

Mysore

Bhojani

Kowalsky

et al. 2019

IET Power Electronics

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This work investigates modification on the top-side aluminium (Al) metallisation of 1.2 kV insulated-gate bipolar transistors (IGBTs) under repetitive short-circuit (SC) type-I measurements for two different parasitic inductances of 45 and 380 nH. The presence of current-density filaments starting at the collector side during SC leads to local temperature increase of the emitter metallisation and thus to modification of the top Al surface in the pattern of the current filaments. Here, two techniques thermo-reflectance microscopy, which can detect the surface temperature during repetitive short circuits directly and Al modifications after repetitive SC with analysis under optical microscope after the test have been considered. At 45 nH, with different DC-link voltages from 300 to 600 V, the Al modification pattern is non-uniform and it becomes uniform for V DC >600 V. However, for 380 nH parasitic inductance and for DC-link voltages 300 and 400 V, the Al reconstruction shows a non-uniform pattern and becomes uniform for V DC ≥500 V. The SC simulations were performed by using a simplified front-side IGBT structure using variable DC-link voltages and inductances to reproduce the filament behaviour.

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Section: Measurement Of Igbt I-v Characteristicsmentioning

confidence: 99%

Al modification as indicator of current filaments in IGBTs under repetitive SC operation

Mysore

Bhojani

Kowalsky

et al. 2019

IET Power Electronics

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“…Besides, the failure characterization and mechanism of the latter two turn-off failures are almost the same. As for the underlying failure mechanism, another current filamentation effect caused by the negative differential resistance (NDR) region is the necessary destruction precondition [28,36,[39][40]. Differing from the former collector-side current filament forming under the MOSFET-mode operation, this one appears at the emitter-side of the IGBT.…”

Section: High-ratio Region Dominating Failuresmentioning

confidence: 99%

“…This is to say, the relative values of the triggering voltages for the self-turn-off failure and turn-off failure during the steady state against Vrated are more approaching to 1. In other words, as limiting factors for the IGBT short-circuit VDC/Vrated-ISC SOA, these two turn-off failures will play dominating roles in high-ratio region of the device full-voltage range [20,32,39].…”

Section: Fig10 1700v/1000a Igbt Avalanche Breakdown Curve and Currementioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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IGBT short-circuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss the recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, a 3D-SCSOA is introduced as the IGBT's operational boundary to divide the short-circuit failure modes of device into short-circuit VDC/Vrated-ISC SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the 3D-SCSOA characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependency research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode researches of IGBT stands and is heading is provided.Index terms-High power IGBTs, Short-circuit failure mode, 3D-SCSOA, Self-heating, Temperature dependencyNone of the material in this paper has been published or is under consideration for publication elsewhere.

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“…To understand the device behaviour, the static characteristics of the IGBT at different gate voltages has to be well understood. The technique to measure IGBT static characteristics non-destructively was explained in [5]. Complete static characteristics were measured using two different measurement setups.…”

Section: Igbt Complete I-v Characteristics Up To Breakdown Pointmentioning

confidence: 99%

“…The measurement points in desaturation and breakthrough area at the breakthrough branch were taken using a single pulse short-circuit (SC) type 1 measurement setup given in Fig. 1(a) [5]. V GE = 15 V, V DC = 3.5 kV, L par = 3.9 μH, R G,on = 44 Ω, R G,off = 220 Ω, T = 400 K A protection IGBT (SIGBT) was used to turn-off the short-circuit in a case of DUT (device under test) failure.…”

Section: Igbt Complete I-v Characteristics Up To Breakdown Pointmentioning

confidence: 99%

IGBTs working in the NDR region of their I-V characteristics

et al. 2015

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This paper demonstrates the detailed work on high voltage IGBTs using simulations and experiments. The current-voltage characteristics were measured up to the break through point in forward bias operating region at two different temperatures for a 50 A/4.5 kV rated IGBT chip. The experimentally measured data were in good agreement with the simulation results. It was also shown that the IGBTs are able to clamp high collector-emitter voltages although a low gate turn-off resistor in combination with a high parasitic inductance was applied. Uniform 4-cell and 8-cell IGBT models were created into the TCAD device simulator to conduct an investigation. An engendered filamentation behaviour during short-circuit turn-off was briefly reviewed using isothermal as well as thermal simulations and semiconductor approaches for development of filaments. The current filament inside the active cells of the IGBT is considered as one of the possible destruction mechanism for the device failure.

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Measurement of a complete HV IGBT I-V-characteristic up to the breakdown point

Cited by 11 publications

References 10 publications

Al modification as indicator of current filaments in IGBTs under repetitive SC operation

Al modification as indicator of current filaments in IGBTs under repetitive SC operation

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

IGBTs working in the NDR region of their I-V characteristics

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