Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Sevimli, Oya; Parker, Anthony E.; Fattorini, Anthony P.; Mahon, Simon J.

doi:10.1109/ted.2013.2254117

Cited by 16 publications

(9 citation statements)

References 12 publications

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“…The differences are accentuated for the strong base currents. Our results are very similar with that demonstrated in [10] with the same type of HBT (InGaP/GaAs) but with different dimensions.…”

Section: Characteristics Of Ingap/gaas Hbtssupporting

confidence: 90%

“…A major issue of the power HBT's is that the current gain is decreased with junction temperature due to self-heating effect giving rise to a negative differential resistance. Several researches have proposed specific configurations to enhance the thermal stability of GaAs-based HBTs [9,10]. This work describes three issues about temperature dependence: Gummel plot, current gain and RF performances of InGaP/GaAs HBT's.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Nadjet¹,

Ghaffour²

2020

IJECE

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The variation and stability of HBT's parameters at different temperatures are important for utilizing these devices in high-power integrated circuits. The temperature dependence of the DC current gain of bipolar transistors, as a key device parameter, has been extensively investigated. A major issue of the power HBT's is that the current gain is decreased with junction temperature due to self-heating effect.Hence, how to stabilize the DC current gain and RF performances is important issue to develop the power HBTs. This work describes the DC and high-frequency temperature dependence of InGaP/GaAs HBT's. The substrate temperature (T) was varied from 25 to 150°C. The static and dynamic performances of the HBT are degraded at high temperature, due to the reduced of carrier mobility with increasing temperature. The current gain (β) decreases at high temperatures; from 140 to 127 at 25 to 150°C, while the decreases in the peak Ft and Fmax are observed from about 110 GHz to 68 GHz and from 165 GHz to 53 GHz respectively in the temperature range of 25 to 150°C.

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Section: Characteristics Of Ingap/gaas Hbtssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Nadjet¹,

Ghaffour²

2020

IJECE

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“…Therefore, it is characterized by the Taylor series to reduce the number of parameters and simplify the modeling work. The first-order Taylor approximation is able to meet the engineering requirements in terms of prediction precision because there is a quasi-linear decrease of the current with the increase of the temperature over the region of interest [30]. Fig.…”

Section: B Temperature-dependent Current Modelmentioning

confidence: 99%

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Huang

Luo

et al. 2019

IEEE Access

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Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of this work is to utilize a general dimension-reduction method to quickly and accurately construct large-signal models of semiconductor devices with consideration of thermal effects. In general, the junction voltage dimension is represented by empirical functions, whereas the junction temperature dimension is described by the first-order Taylor series approximation. The final analytical current model is a combination of two independent sets of empirical functions. These functions are constructed from pulsed I-V measurements at different ambient temperatures. The percentages of different components are controlled by the thermal level. Two commercial InGaP/GaAs heterojunction bipolar transistors are investigated to verify the effectiveness of this method. The large-signal models are implemented in Advanced Design System. Excellent agreement is achieved between measurement and simulation of the I-V characteristics, S-parameters, and power sweeps. The dimension reduction method is able to effectively reduce the number of equations and parameters because the temperature dimension is expanded by using a Taylor series. In addition, this method would be applied to the thermal modeling of various devices based on new materials or process technologies. Accordingly, the dimension reduction method is powerful and useful in fast and accurate thermal modeling of microwave semiconductor devices.

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“…In InP HBTs, however, the device architecture is fundamentally different due to their mesa structure and absence of trench isolations, thus requiring a new formulation for the ZTH. There have been efforts to model thermal behavior in III-V HBTs through extensive characterization and VBIC [9], R-C network based small signal [10] or 3D finite element simulations [11]. In this paper, we propose a comprehensive and computationally efficient as well as geometry scalable HiCuM-integrated compact model implementation of electro-thermal network for InGaAs/InP HBTs derived from physical relations which can be used in time and frequency domain analyses with three cells, improving model computation time.…”

Section: Introductionmentioning

confidence: 99%

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

Mukherjee

Couret

Nodjiadjim

et al. 2019

IEEE Trans. Electron Devices

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In this work we report a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within the HBT architecture. The heat flows through both the emitter metal layers and towards the substrate are taken into account for the model development. The model constitutes of individual thermal contributions of the different regions of the intrinsic device and metal layers. On-wafer low-frequency S-parameters measurements have been performed on several device geometries to study the device dynamic self-heating. The model has been validated against the measurements showing good accuracy and scalability. Time domain pulse measurements have also been performed to correlate with the frequency domain S-parameter measurements.

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Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Cited by 16 publications

References 12 publications

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications

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