Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Impact-ionization coefficient in silicon at high fields— a parametric approach

“…As a consequence, the parabolic-band approximation can not be used to simplify (2). To proceed we exploit the evidence gained in the investigations reported in [4,8] and references therein, where solutions of the Boltzmann transport equation were extensively compared with experimental results. In the approach of [4,8] the full-band structure of the semiconductor is taken as the starting point, and is then sphericized in a way that retains the density of states and squared group velocity of the original band.…”

“…To proceed we exploit the evidence gained in the investigations reported in [4,8] and references therein, where solutions of the Boltzmann transport equation were extensively compared with experimental results. In the approach of [4,8] the full-band structure of the semiconductor is taken as the starting point, and is then sphericized in a way that retains the density of states and squared group velocity of the original band. As such comparisons show a satisfactory agreement with experiments in a wide range of electric field and temperature, the band sphericization will be used here as well.…”

“…1 Comparison of (12) with other works further dependencies on the parameters. Such dependencies are readily incorporated into the theory by means of standard models (e.g., [4]). Equation (11) lends itself to a comparison with fully-numerical calculations and experiments.…”

“…Combinations of exponentials of the above form have been used, e.g., in [2][3][4]. In other cases, expressions like α n = A(T L ) exp[−c(T L )/E 2 ] have been investigated [5].…”

Field-plate assisted RESURF power devices : gradient based optimalization, degradation and analysis

“…However, for more intricate dependencies, e.g. with temperature and field, the more accurate Chynoweth's-like expressions [14,92,93] can be used.…”