2011
DOI: 10.1063/1.3666321
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Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si

Abstract: In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. Here, we demonstrate both control and measurement of the oxidation of H-terminated (111) Si. Control is achieved by externally applying uniaxial strain, and measurement by second-harmonic … Show more

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“…Most of the Si-CH 3 species can eventually become hydrolyzed by neighboring Al-OH species once the coverage of Al-OH is large enough [48], and the H-terminated Si may eventually also become oxidized during the H 2 O and O 3 pulses. The oxidation of H-terminated Si by H 2 O has been studied in detail previously, and it is believed that Si-OH and H 2 are formed initially, and that the OH-group then inserts into a Si-Si back bond, creating Si-O-Si and regenerates a Si-H bond at the surface, which then reacts with more H 2 O [49], [50]. The low growth rates are thus likely to result in an AlO x layer with a different structure and density than an AlO x layer growing at steady-state growth conditions after the first cycle.…”
Section: Discussionmentioning
confidence: 99%
“…Most of the Si-CH 3 species can eventually become hydrolyzed by neighboring Al-OH species once the coverage of Al-OH is large enough [48], and the H-terminated Si may eventually also become oxidized during the H 2 O and O 3 pulses. The oxidation of H-terminated Si by H 2 O has been studied in detail previously, and it is believed that Si-OH and H 2 are formed initially, and that the OH-group then inserts into a Si-Si back bond, creating Si-O-Si and regenerates a Si-H bond at the surface, which then reacts with more H 2 O [49], [50]. The low growth rates are thus likely to result in an AlO x layer with a different structure and density than an AlO x layer growing at steady-state growth conditions after the first cycle.…”
Section: Discussionmentioning
confidence: 99%