Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex

Strain conservation in implantation-doped GeSi layers on Si(100)

“…The result is M 00/210=0.48. This value compares favorably with those we found in the literature: 0.47 for a strained Ge~Si~_x layer with x=0.08 and a doping concentration of 2• 10 j' cm -~ [11], and -4/.45 for a strained layer with x=0.12 and a doping concentration of 1-2 • 10 t~ cm ~ [10]. Using 0.48 for rh and the measured value of the sheet Hall mobility (-80 cm"/Vs), the sheet value of the drift mobility, ~d, of about 170 crn2/Vs is obtained.…”

“…However, those studies don't include the electrical behavior of implanted dopants in GeSi even though an anomalous electrical behavior of p-type doped strained GeSi was reported before [10,11]. Cams and McGregor observed that in strained GeSi layers which were heavily doped by elemental B during molecular beam epitaxy, the Hall mobility of holes, lab, is lower than the drift mobility, ~t~, in the strained layers [10,11]. This difference becomes greater with increasing Ge content in the layers.…”

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

“…For this study, we used a set of dedicated test samples consisting of 20 nm thick epitaxially grown Si and SiGe layers, in situ doped with boron (from 1 × 10 18 cm −3 to 1 × 10 20 cm −3 ). By comparing experimental Hall values with average calculated values based on the dopant concentration profiles measured by SIMS, we determined a scattering factor of 0.75 for holes in Si and values ranging from 0.4 to 0.35 for holes in SiGe with a Ge content of 22 atom % and 30 atom %, respectively, in perfect agreement with literature (Figure S6, Supporting Information File 1 ) [ 33 – 35 ].…”

“…Scattering correction must be accounted for when extracting Hall effect parameters. The measured values of Hall carrier concentration and Hall mobility are therefore corrected by using the Hall scattering factor, r H , [ 33 – 35 ] which depends on the studied material, i.e., on Ge content, doping type and concentration. For this study, we used a set of dedicated test samples consisting of 20 nm thick epitaxially grown Si and SiGe layers, in situ doped with boron (from 1 × 10 18 cm −3 to 1 × 10 20 cm −3 ).…”

Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

“…We have not compared our simulations with experimental results since there is a noticeable dearth of experimental results for undoped strained SiGe. Experimental results for heavily doped strained layers [18][19][20] suffer from large experimental uncertainty making quantitative comparison impossible. The 'in-plane' mobility shows the highest mobility in agreement with other published data [2,3] which is important for MOSFET operation since this represents the direction along the channel.…”