MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM

Hanna, S.; Eich, D.; Mahlein, K.-M.; Fick, Wolfgang; Schirmacher, W.; Thöt, R.; Wendler, J.; Figgemeier, H.

doi:10.1007/s11664-016-4523-4

Cited by 17 publications

(5 citation statements)

References 14 publications

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“…However, for high flux applications, e.g., earth observation with relative large number of photons, T2SL detectors offer excellent properties. A comparison with state-of-the-art HgCdTe detectors [10][11] , specially designed for astronomical applications, where low dark currents are required, is shown in Fig. 6.…”

Section: Dark Current Measurementsmentioning

confidence: 99%

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Type-II superlattices: a promising material for space applications

Daumer

Rutz

Wörl

et al. 2019

International Conference on Space Optics — ICSO 2018

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Type-II superlattices (T2SLs) are currently recognized as the sole material system offering comparable performance to HgCdTe, yet providing higher operability, stability over time, spatial uniformity, scalability to larger formats, producibility and affordability. Hence, T2SL technology is very promising for space applications. Fraunhofer IAF played a vital role in the development of III-As/Sb T2SLs right from the beginning. Mono-and bi-spectral focal plane arrays up to 640×512 pixels for the mid-and long-wavelength infrared (IR) have been demonstrated. The growth of T2SL is performed by molecular beam epitaxy (MBE) in multi-wafer reactors. We report on the excellent homogeneity and reproducibility of the growth process, established in the past years at Fraunhofer IAF. After processing this material to detector arrays, the T2SL detectors have been characterized down to low temperatures (below 40K) with promising properties regarding the dark current. For MWIR and LWIR detectors the resolution limit of the measurement setup with a dark current density of 2×10 -10 A/cm² has been reached at 77 K and 36 K, respectively.

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Section: Dark Current Measurementsmentioning

confidence: 99%

“…Dark current density of T2SL structures as a function of the inverse temperature and inverse cut-off wavelength in comparison with published HgCdTe data[10][11] .…”

mentioning

confidence: 95%

Type-II superlattices: a promising material for space applications

Daumer

Rutz

Wörl

et al. 2019

International Conference on Space Optics — ICSO 2018

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“…In addition, the infrared sensors are also widely used in telecommunication and health applications with a lower cost of production [3]. One of the most used infrared light sources is mercury-based materials but difficulties in production make working with these materials reluctant [4]. Beyond the Mercury-based materials, infrared light sources are rare, and the device performances are not the best till now.…”

Section: Introductionmentioning

confidence: 99%

A Study on The Optical Properties of Long-Infrared Intraband Transitions of Quadruple Gaas/Alxga1-Xas Quantum Well Under Applied Electric Field

ALTUN

2023

Cumhuriyet Science Journal

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Semiconductor-emitting/absorbing infrared devices are in the common interest of the scientific and industrial community due to their broad application in these fields. GaAs/AlGaAs based devices are one of the most studied semiconductor heterostructures. In this study, I have aimed to design GaAs/AlGaAs quantum well (QW) semiconductor heterostructures to emit/absorb in the long infrared region and studied the optical properties. To do that, I have designed a quadruple QW, which is composed of GaAs/Al0.44Ga0.56As QW and quantum barriers (QB). I have solved the time-independent Schrödinger equation using the finite element method-based matlab code under effective mass approximation. The wave functions and corresponding energy eigenvalues are obtained for varied electric field (EF) intensities. I have shown that our design can operate up to 80 kV/cm, which is the limit for first bounded energy eigenstates. It is observed that E_32 transition provides long-infrared emission/absorption corresponding to the 0.12-0.14 eV transition energy and it is constant with increased EF intensity. In addition, it is seen that the overlap of the wave functions is increasing with EF intensity which enhances radiative transition in the structure. I have calculated the linear absorption coefficient and refractive index change. I have observed that the absorption coefficient of E_32 transition is increasing with EF intensity while E_31 is decreasing and E_21 is constant. As a last, I have shown that EF intensity has a minor effect on refractive index change.

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“…Many references in the literature have characterized the dark current dependence with temperature for MCT sensors (e.g. Beletic et al, 2008;Breiter et al, 2016;Goldberg et al, 2003;Hanna et al, 2016;Hu et al, 2009;Knowles et al, 2011). Hanna et al (2016), for instance, show that for one specific type of MCT detector the dark current surface density increases four orders of magnitude, from about 10 -4 to 10 0 pA/μm 2 as its temperature changes from about 46 to 87 K. For this reason all commercial and/or scientific MCT cameras ship with a cooling module, to keep the FPA at a stable temperature (e.g.…”

Section: Introductionmentioning

confidence: 99%

Characterizing the temperature response of a Hg-Cd-Te camera for field applications

Ostermayer

Correia

2020

Heliyon

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Hg-Cd-Te (MCT) cameras can be used to analyze the thermal emission or the infrared reflective response of physical systems. However, measurements performed with this instrument need to be corrected for the thermal emission from the environment surrounding the camera. In this work we analyzed this effect under conditions typically met in field applications, when environmental temperature variations are common. The dark current signal on a Xeva MCT 320 CL TE4 camera was studied as a function of ambient temperature and the integration time used for image acquisition. The MCT sensor at the focal plane was kept at a constant nominal temperature of 210 K by a thermoelectric cooler unit throughout the experiment. Integration times for data acquisition varied between 2.0 to 12.0 ms. The camera body temperature was monitored within AE0.2 C, ranging from about 17.0 C to 27.0 C. The camera unit was allowed to reach thermal stabilization in a controlled-temperature lab before each measurement session. Both the integration time, and temperature range intervals were chosen to represent typical field deployment conditions. The average dark current signal showed a clear linear dependence with integration time, for a constant environmental temperature setting. The slope of this linear relation increased with the ambient temperature, whereas the intercept was insensitive to temperature changes. The standard deviation of the dark current signal was a function of integration time, but independent of the ambient temperature setting. These results allowed modeling the dark current signal as a function of the integration time and the camera body temperature. To minimize the dark current for a given integration time setting, measurements should be performed under the coldest possible conditions, in opposition to manufacturer recommendations. As a direct consequence of these results, the useful dynamic range for science applications with this MCT camera is reduced with increasing integration times and ambient temperatures. For instance, when acquiring images with 5 ms integration time, at 22 C ambient temperature, the resulting dark current signal reduces the maximum useful dynamic range in about 20%. The results shown here can be promptly adapted to other applications with MCT cameras, especially in situations with a non-controlled thermal environment, or when analyzing the reflective properties of cold targets.

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MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM

Cited by 17 publications

References 14 publications

Type-II superlattices: a promising material for space applications

Type-II superlattices: a promising material for space applications

A Study on The Optical Properties of Long-Infrared Intraband Transitions of Quadruple Gaas/Alxga1-Xas Quantum Well Under Applied Electric Field

Characterizing the temperature response of a Hg-Cd-Te camera for field applications

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