MBE-Regrowth for Monolithic Integration of GaAs-Based Field-Effect Transistors and Schottky Diodes

Hackbarth, T.; Muessig, H.J.; Jonsson, Gunnar Eigil; Brugger, H.

doi:10.1007/978-94-011-0341-1_32

Cited by 4 publications

(1 citation statement)

References 4 publications

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“…It is based on preparation of V-grooves by in situ thermal etching of masked GaAs substrates and subsequent MBE overgrowth [5]. Pyrometer controlled thermal desorption of GaAs was investigated by Hackbarth et al for the preparation of monolitically integrated devices, which involve MBE regrowth after extensive ex situ processing [6].…”

Section: Introductionmentioning

confidence: 99%

In situetching with AsBr₃and regrowth in molecular beam epitaxy

Schuler¹,

Kaneko²,

Lipiński³

et al. 2000

Semicond. Sci. Technol.

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We report in situ etching in III-V molecular beam epitaxy (MBE) with AsBr 3 as the etching species and MBE regrowth of in situ structured GaAs substrates. The application of AsBr 3 provides atomic layer precise etching as well as full compatibility with MBE growth. The quality of etched interfaces in GaAs/AlGaAs heterostructures is investigated by photoluminescence (PL) and Hall-effect measurements. They indicate a slightly enhanced interface roughness for etched samples compared to as-grown structures but no incorporation of bromine could be detected. However, an insufficient removal of dopants as well as carbon and oxygen surface contamination was observed in SIMS studies.A material selectivity between the metallic components In, Ga and Al was investigated as well as a crystallographic selectivity in GaAs. Selective etching of SiO 2 masked GaAs(100) substrates allows in situ preparation of extremely sharp V-grooves with almost perfectly planar {110} side facets. By MBE regrowth of V-grooves we prepared buried layers and completely embedded wires which were characterized by SEM and PL.

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Section: Introductionmentioning

confidence: 99%

In situetching with AsBr₃and regrowth in molecular beam epitaxy

Schuler¹,

Kaneko²,

Lipiński³

et al. 2000

Semicond. Sci. Technol.

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Atomic layer in situ etching and MBE regrowth

Eberl

Lipiński

Schuler

1999

Journal of Crystal Growth

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Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates

Ambrosini

Fanetti

Grillo

et al. 2011

Journal of Applied Physics

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Synthesis of silicon oxide nanowires and nanotubes with cobalt-palladium or palladium catalysts J. Appl. Phys. 112, 024312 (2012) Sulfur-mediated palladium catalyst immobilized on a GaAs surface J. Appl. Phys. 111, 124908 (2012) Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires AIP Advances 2, 022150 (2012) Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication J. Appl. Phys. 111, 064310 (2012) Study on transport pathway in oxide nanowire growth by using spacing-controlled regular array Appl. Phys. Lett. 99, 193105 (2011) Additional information on J. Appl. Phys.Self-catalyzed GaAs nanowire growth was obtained by molecular beam epitaxy on GaAs(001) substrates after predeposition of subnanometer-thick Si layers. Two substrate preparation methods are presented, the first based on the epitaxial growth of Si on GaAs and subsequent exposure to atmosphere, and the second on the direct deposition of Si on epiready GaAs substrates. X-ray photoemission spectroscopy shows that both methods result in a thin Si oxide layer that promotes the growth of GaAs nanowires aligned along the h111i direction. High densities of nanowires were obtained at substrate temperatures between 620 and 680 C. Systematic electron microscopy studies indicate that nanowire growth is associated with the formation of Ga nanoparticles on the substrate surface, which act as a catalyst in the vapor-liquid-solid growth mechanism frame. The majority of the nanowires have a pure zinc-blende structure, and their photoluminescence is dominated by a photoluminescence peak 3 to 5 meV in width and centered at 1.516 to 1517 eV.

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MBE-Regrowth for Monolithic Integration of GaAs-Based Field-Effect Transistors and Schottky Diodes

Cited by 4 publications

References 4 publications

In situetching with AsBr₃and regrowth in molecular beam epitaxy

In situetching with AsBr₃and regrowth in molecular beam epitaxy

Atomic layer in situ etching and MBE regrowth

Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates

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MBE-Regrowth for Monolithic Integration of GaAs-Based Field-Effect Transistors and Schottky Diodes

Cited by 4 publications

References 4 publications

In situetching with AsBr3and regrowth in molecular beam epitaxy

In situetching with AsBr3and regrowth in molecular beam epitaxy

Atomic layer in situ etching and MBE regrowth

Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates

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Product

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In situetching with AsBr₃and regrowth in molecular beam epitaxy

In situetching with AsBr₃and regrowth in molecular beam epitaxy