MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Guo, Jia; Li, Guowang; Faria, Faiza Afroz; Cao, Yu; Wang, Ronghua; Verma, Jai; Gao, Xiang; Guo, Shiping; Ketterson, A.; Schuette, Michael L.; Saunier, P.; Wistey, Mark A.; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/led.2012.2186116

Cited by 126 publications

(69 citation statements)

References 18 publications

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“…From the TLM patterns with regrown n + GaN channel and contacts, a contact resistance of 0.06 Ω · mm and a sheet resistance of 67 Ω/sq were obtained. The contact resistance between the regrown n + GaN and the 2DEG channel is thus calculated to be 0.08 Ω · mm, which is higher than our previous reported value [17] likely due to the use of a plasma treatment before the regrowth. Fig.…”

Section: Resultscontrasting

confidence: 73%

“…Finally, 30-nm 2 × 25 µm 2 rectangular Ni gates were defined by e-beam lithography and liftoff. Further details on processing and regrowth can be found in [16] and [17]. The 2-D electron gas (2DEG) concentration and electron mobility are 1.92 × 10 13 cm −2 and 1240 cm 2 /V · s, respectively, leading to a sheet resistance of ∼262 Ω/sq, determined by the Hall effect measurement after the HEMTs were fabricated.…”

Section: Methodsmentioning

confidence: 99%

“…However, all these devices suffered from high contact resistance (R c ) of > 0.3 Ω · mm and high on-resistance (R on ) of > 1 Ω · mm due to the alloyed ohmic contacts and large source-drain distance (L sd ). To reduce R c , several groups have successfully demonstrated low contact resistances using molecular beam epitaxy (MBE) regrown contacts in GaN-based HEMTs [14]- [17]. Shinohara et al reported deeply scaled self-aligned gate AlN/GaN HEMTs with both f T and f MAX higher than 300 GHz by incorporating regrown ohmic contacts, AlGaN back barrier, L g ∼ 20 nm, and L sd ∼ 100 nm [1].…”

Section: Inaln/aln/gan Hemts With Regrown I Introductionmentioning

confidence: 99%

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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yue

Guo

et al. 2012

IEEE Electron Device Lett.

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We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency (f T ) of 370 GHz. The HEMT without back barrier exhibits an extrinsic transconductance (g m.ext ) of 650 mS/mm and an on/off current ratio of 10 6 owing to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 Ω · mm. Delay analysis suggests that the high f T is a result of low gate-drain parasitics associated with the rectangular gate. Although it appears possible to reach 500-GHz f T by further reducing the gate length, it is imperative to investigate alternative structures that offer higher mobility/velocity while keeping the best possible electrostatic control in ultrascaled geometry.

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Section: Resultscontrasting

confidence: 73%

Section: Methodsmentioning

confidence: 99%

Section: Inaln/aln/gan Hemts With Regrown I Introductionmentioning

confidence: 99%

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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yue

Guo

et al. 2012

IEEE Electron Device Lett.

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“…An MBE regrowth process was employed to form n+ GaN ohmic contacts to the 2DEG channel using a technique similar to what we have reported earlier [13][14][15] . A ∼200-nm-thick SiO 2 mask was deposited on the nitride heterostructures using plasma-enhanced chemical vapor deposition (PECVD) and then patterned by reactive ion etching (RIE).…”

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confidence: 99%

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Ganguly

et al. 2017

Applied Physics Letters

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We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a twodimensional electron gas (2DEG) density in excess of 2×10 13 /cm 2 . Ohmic contacts to the 2DEG channel were formed by n + GaN MBE regrowth process, with a contact resistance of 0.13 Ω·mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency f T ∼ 120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.State-of-art gallium nitride based electronic devices have demonstrated excellent performance in highfrequency and high-power applications 1-5 . These devices are on thick GaN buffer layers, most of which are on SiC substrates for efficient thermal dissipation. The heteroepitaxially grown GaN layers inherently incorporate high density of dislocations (typically ∼ 10 9 /cm 2 ), which give rise to reliability issues and degrade breakdown characteristics.In this letter we show that thin strained GaN quantum well double heterostructures on bulk AlN substrates offer an attractive alternative approach for high-performance nitride electronics. To meet the scaling requirements for high-speed high-power RF applications, tight electrostatic control and quantum confinement of charge carriers are highly desired. The wide direct band gap of AlN (∼6.2 eV) and its large band offset with GaN offers the maximal vertical confinement of carriers in nitride channels. The large polarization charge of AlN induces high density two-dimensional electron gases (2DEG) in the quantum well, which is desired for high current drive and lateral scaling of gate lengths. The thermal conductivity of AlN, estimated 6 to be as high as ∼340 W/m·K can be comparable 7 to that of SiC ∼370 W/m·K, and offers the potential benefit of reducing thermal boundary resistance. Thus AlN simultaneously satisfies the conflicting requirements of high thermal conductivity and high electrical resistivity for high-power microwave electronics. Importantly, the low dislocation density (∼ 10 4 /cm 2 ) of single-crystal bulk AlN substrates has the potential for defect-free channels and barriers in principle, which is a promising prospective for improving thermal robustness, reliability, breakdown, and noise characteristics of these devices 8 . The presence of a very thin GaN quantum well active region embedded in the AlN/GaN/AlN double heta) Electronic mail: djena@cornell.edu. erostructure also enables selective optical-marker based Raman metrology of strain 9 present in the active layer...

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“…При больших значениях сопротивления между сильнолегированными GaN и ДЭГ его можно минимизировать за счет предварительного нагрева гетероструктуры со сформированным сильнолегированным GaN перед операцией формирования контакт-ной металлизации несплавных омических контактов. По зарубежным данным теоретический предел сопротивления к ДЭГ для GaN-HEMT составляет менее 0.02 · mm [8].…”

Section: поступило в редакцию 14 июня 2017 гunclassified

Термическая стабильность несплавных омических контактов к гетероструктурам AlGaN/GaN

Павлов¹,

Павлов²,

Слаповский³

2017

Письма В Журнал Технической Физики

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Представлены результаты исследования деградации несплавных омических контактов с эпитаксиально-доращиваемым сильнолегированным GaN к гетероструктурам с двумерным электронным газом (ДЭГ). Исследовалось изменение значения относительного удельного контактного сопротивления при температурах до 600oC для металлизаций Ti/Pd/Au, Cr/Au и Cr/Pd/Au. Наилучшую стойкость к температурным воздействиям показал состав металлизации Cr/Pd/Au, сопротивление которого уменьшалось при рабочих температурах 400oC. Впервые продемонстрировано, что наибольший вклад в увеличение значения контактного сопротивления к ДЭГ при нагреве выше 400oC вносит сопротивление структуры металл-полупроводник (Cr/Pd/Au-n+-GaN), при этом при температурах 400oC и выше происходит уменьшение значения сопротивления между сильнолегированным GaN и ДЭГ. DOI: 10.21883/PJTF.2017.22.45267.16917

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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Cited by 126 publications

References 18 publications

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Термическая стабильность несплавных омических контактов к гетероструктурам AlGaN/GaN

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