MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

Grendysa, J.; Tomaka, G.; Śliż, P.; Becker, C. R.; Trzyna, M.; Wojnarowska-Nowak, Renata; Bobko, E.; Sheregii, E. M.

doi:10.1016/j.jcrysgro.2017.10.003

Cited by 2 publications

(2 citation statements)

References 28 publications

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“…Following this methodology, the topological surface states in strained HgTe were recently observed experimentally within the strain-induced band gap [21]. As a consequence, physical properties of the surface electronic states in strained HgTe-based materials are currently in the focus of attention [22][23][24][25][26][27][28][29][30][31][32][33]. However, the theory describing the structure of these surface states is still far from being complete.…”

Section: Introductionmentioning

confidence: 99%

Structure of surface electronic states in strained mercury telluride

Kyriienko

Shelykh

2019

New J. Phys.

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We present the theory describing the various surface electronic states arisen from the mixing of conduction and valence bands in a strained mercury telluride (HgTe) bulk material. We demonstrate that the strain-induced band gap in the Brillouin zone center of HgTe results in the surface states of two different kinds. Surface states of the first kind exist in the small region of electron wave vectors near the center of the Brillouin zone and have the Dirac linear electron dispersion characteristic for topological states. The surface states of the second kind exist only far from the center of the Brillouin zone and have the parabolic dispersion for large wave vectors. The structure of these surface electronic states is studied both analytically and numerically in the broad range of their parameters, aiming to develop its systematic understanding for the relevant model Hamiltonian. The results bring attention to the rich surface physics relevant for topological systems.

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Section: Introductionmentioning

confidence: 99%

Structure of surface electronic states in strained mercury telluride

Kyriienko

Shelykh

2019

New J. Phys.

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“…Next, the (Hg,Cd)Te solid solution layers with thickness ranging from approximately 300 to 1000 nm and chemical compositions not exceeding 20% of CdTe were grown on hybrid substrates prepared in such a manner. For more details on the growth technology see [11,12].…”

Section: Methodsmentioning

confidence: 99%

Nanoindentation Studies of the MBE-Grown, Zero-Gap (Hg,Cd)Te Epilayers

et al. 2019

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Hg,Cd)Te epilayers containing a dozen percent of CdTe were grown by molecular beam epitaxy technique on GaAs wafers with thick CdTe buffer layers. The X-ray diffraction method was used to determine a chemical composition of the epilayers. The scanning electron microscopy measurements in turn were performed to determine the thickness of epilayers, and both scanning electron and atomic force microscopy to evaluate structures' morphology. The selected mechanical properties of samples were studied by the nanoindentation technique. The average values and standard deviations of the nanohardness and Young's modulus were extracted from the collected loaddisplacement data. The values of both parameters were compared with those determined for bulk crystals and those known from the literature.

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MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

Cited by 2 publications

References 28 publications

Structure of surface electronic states in strained mercury telluride

Structure of surface electronic states in strained mercury telluride

Nanoindentation Studies of the MBE-Grown, Zero-Gap (Hg,Cd)Te Epilayers

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