MBE growth of planar microcavities with distributed Bragg reflectors

Optoelectronic Devices Employing One-Dimensional Photonic Structures

“…A practical realization of such device is a resonant cavity enhanced light emitting diode (RC LED). Such diode was for the first time realized by Schubert et al [14], and later by others [15][16][17]. One of such realization is a device designed for the emission at 1000 nm in which the 8 nm thick InGaAs quantum wells located in a GaAs slab are enclosed by two DBR [18].…”

“…The temperature tuning of a RC LED. The difference in the temperature drift of a cavity resonance and the QW peak emission allows to tune the device and evaluate its design potential [16].…”

<title>InGaAs resonant-cavity light-emitting diodes (RC LEDs)</title>

“…Similarly, the position of the cavity resonance depends on the thickness of the spacer layers between the mirrors and the QW region and the phase of the reflection from the mirrors. Thus, the optimum performance of the structure requires simultaneous alignment of all three features [5]. The goal in growing the mirrors for RC LED is to get the layers each approximately a quarter wavelength thick and to get the reflection band centered at the right wavelength range.…”

“…5 Ga 0 . 5 As layers were inserted in between GaAs and AlAs layers to lower DBR resistivity. The reference structure #449 of conventional LED without DBR reflectors has been grown for the sake of comparison.…”

Resonant Cavity Enhanced Photonic Devices

“…W e wi l l basical l y fol lo w our earl i er trea tm ent of these pheno mena [5,6]. Let us consi der an elementary exci ta ti on (exci to n) i n sol i d coupl ed to the quanti zed ra di ati on Ùel d. The coupl i ng can be descri b ed by a perturba ti on term i n the exci to n-Ùeld Ha mi lto ni an…”