E. Monroy, F. Guillot, S. Leconte, E. Bellet-Amalric, E. Baumann, F. Giorgetta, D. Hofstetter, L. Nevou, M. Tchernycheva, L. Doyennette, F.H. Julien, T. Remmele, M. Albrecht
AbstractIn this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integration of the final device. The growth of Si-doped GaN/AlN multiple quantum well (QW) structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface rou…
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