MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

Gassenq, A.; Cerutti, L.; Баранов, А. Н.; Tournié, E.

doi:10.1016/j.jcrysgro.2008.10.074

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…Experimental results suggest that the InAs/GaSb/InSb SPSL-based type-II broken gap can be used as an advanced optoelectronic device such as mid-infrared lasers [17,18]. Therefore, it is of great importance and significance to give a quantitative description of the influence of the inserted InSb layer and the IFs on the optical performance of the InAs/GaSb/InSb SPSL laser structure.…”

Section: Introductionmentioning

confidence: 99%

Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission

Debbichi¹,

Rejeb²,

Debbichi³

et al. 2011

Semicond. Sci. Technol.

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We use a standard 8 × 8 envelope-function approximation (EFA) formalism taking into account the effect of anisotropic and other interface (IF) interactions to investigate the electronic and optical properties of short-period superlattice laser structures (InAs/GaSb/InSb)×N grown on a GaSb substrate. We find that the band gaps numerically calculated at different temperatures give a good fitting with the experimental data confirming the model used. The calculated modal gain demonstrates that it is possible to achieve lasing operation at room temperature for N > 12 and for a reasonable total optical loss α t = 25 cm −1 . Therefore, the 8 × 8 EFA formalism with IF design serves as a tool to model the optoelectronic properties of InAs/GaSb/InSb SPSLs.

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Section: Introductionmentioning

confidence: 99%

Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission

Debbichi¹,

Rejeb²,

Debbichi³

et al. 2011

Semicond. Sci. Technol.

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“…Superlattice (SL) is a periodic heterostructure of two or more alternating layers whose bandgap can be engineered by changing the thickness of the constituent layers. Type-II superlattice (T2SL) is emerging as a popular material for photodetectors (PDs), − photodiodes, − avalanche photodetectors (APDs), , light-emitting diodes (LEDs), , lasers, − and phototransistors. , Due to its advantages, such as suppressed Auger recombination, , reduced tunneling current, and the flexibility of incorporating unipolar barriers, T2SL-based devices are theoretically expected to achieve higher performance levels than MCT detectors. , …”

Section: Introductionmentioning

confidence: 99%

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Alshahrani

Kesaria

Jiménez

et al. 2023

ACS Appl. Mater. Interfaces

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Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.

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“…CH 4 has a very strong absorption line at 2.3 µm wavelength [2][3][4], and therefore GaInAsSb/AlGaAsSbbased lasers emitting at that particular wavelength are of high interest [5][6][7][8]. For such diode lasers, Al 0.9 Ga 0.1 As y Sb 1-y lattice-matched to GaSb is used as cladding layers [5,[9][10][11][12]. Latticematching at growth temperature, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Al 0.9 Ga 0.1 As 0.06 Sb 0.94 , is preferred to have dislocation free layers [9]. Te and Be are used as n-type dopant and p-type dopant, respectively, in the cladding layers [10,[13][14][15]. Characteristics of these diode lasers are dependent on parameters used during growth of laser materials and fabrication of diode lasers.…”

Section: Introductionmentioning

confidence: 99%

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

Patra

Tran

Vines

et al. 2017

Journal of Crystal Growth

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Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al 0.9 Ga 0.1 As 0.06 Sb 0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al 0.3 Ga 0.7 As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest

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MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

Cited by 7 publications

References 6 publications

Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission

Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

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