MBE growth of II–VI materials on GaSb substrates for photovoltaic applications

Desorption of Te capping layer from ZnTe (100): Auger spectroscopy, low-energy electron diffraction and scanning tunneling microscopy

“…Principalement, issu de la famille des semi-conducteurs à gap direct avec une largeur de bande interdite de 2,26 eV (549 nm) à 300K et un paramètre de maille a = 6,10132 Å, le ZnTe est considéré comme la structure appropriée pour la réalisation de diodes émettrices de lumière verte, des photodétecteurs UV-verts et des cellules solaires multi-jonctions [4,5,6,7,8,9,10]. Cependant, la réalisation technique de ces dispositifs exige des couches actives de grande qualité cristalline selon le processus d'élaboration qui est généralement la croissance par épitaxie à jets moléculaires (Molecular Beam Epitaxy, MBE).…”

Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

“…1,2 This family of materials contains both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from farinfrared ($0 eV) up to ultra-violet ($3.4 eV). Due to the high cost and limited size of commercial GaSb and ZnTe substrates, ZnTe epilayers grown on GaAs and Si have been proposed and successfully demonstrated as virtual substrates.…”

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

“…[1][2][3][4] These two families of semiconductor materials have identical crystalline structures and very similar thermal expansion coefficients, and they can be grown lattice-matched on GaSb or InAs substrates with low defect densities. Furthermore, these materials are ideal for multi-junction solar cells, as their direct bandgaps allow the use of thin absorbing layers that can be current-matched to efficiently capture the entire solar spectrum.…”

“…Next, a 100 nm GaSb buffer layer was grown at 470 C. The substrate was then transferred to the II-VI chamber, where a ZnTe buffer layer was grown at 320 C under a Zn flux initiated prior to the growth. 2 The CdSe/CdTe superlattice was then grown at 320 C using the modulation of Te and Se shutters while keeping the Cd shutter open. During the growth, the beam equivalent pressure (BEP) ratio of Te/ Cd and Se/Cd were kept at 2:1 and 4:1, respectively.…”