MBE growth of high-mobility 2DEG

Umansky, V.; Heiblum, Moty

doi:10.1016/b978-0-12-387839-7.00006-3

Cited by 10 publications

(6 citation statements)

References 68 publications

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“…This mobility degradation is predominantly due to migration of Si dopant atoms occurring mainly in the crystal growth direction 26 . Nevertheless, when a sufficiently large undoped setback is incorporated, rather high quality single heterostructures 26 and ultra-high mobility double heterointerface doped structures have been demonstrated [27][28][29] . Here, we use a setback of 50 nm, larger than the ∼30 nm exponential Si-tail 26 .…”

mentioning

confidence: 99%

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

Dettwiler,

Fallahi,

Scholz

et al. 2014

Preprint

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We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -using transport, AFM and optics -finding narrowlinewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

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mentioning

confidence: 99%

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

Dettwiler,

Fallahi,

Scholz

et al. 2014

Preprint

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“…To discuss the effect of buffer layer during the growth process, impurities are unavoidably present in and on the substrate for migrating towards the epitaxial layers as noticed by Umansky's group [36]. Development of a comparatively thick buffer layer, which in many cases comprises of AlGaA-GaAs superlattice (SL) because of the high-chemical reactivity of the aluminum-containing layers for retarding impurities from migrating.…”

Section: Resultsmentioning

confidence: 99%

“…Development of a comparatively thick buffer layer, which in many cases comprises of AlGaA-GaAs superlattice (SL) because of the high-chemical reactivity of the aluminum-containing layers for retarding impurities from migrating. Apparently, the selection of compensating doping density is based on to ensure complete ionization of dopants in order to avoid a parallel conductance path [36].…”

Section: Resultsmentioning

confidence: 99%

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Al-Ahmadi

2020

Heliyon

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The effects of an epitaxial layer on the rectifying behavior of n -GaAs/Ti/Au/Si:Al 0.33 Ga 0.67 As diodes have been examined through the inhomogeneity model on n + -GaAs substrate with orientation. The electrical properties and conduction mechanism of these materials were understood through theoretical models. The inhomogeneity model was used to electrical behavior of these diodes was explained. The barrier height inhomogeneity model reveals a 13% and 15% barrier height inhomogeneity in N1 and N2 Schottky diodes, respectively. The ideal thermionic emission behavior increases the ideality factors and reduces barrier heights. Within the entire temperature range, the effective Schottky barrier for a thin epitaxial layer was higher. Such results depicted the presence of defects in the thick layer, which decreased the barrier height and ultimately degraded diode performance. The thermionic emission theory along with Gaussian distribution of barrier heights is explained by the temperature dependence of the forward bias current-voltage-temperature (I-V-T) features.

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“…For example, quantum dots (zero-dimensional restriction) are capable to emit radiation in the THz region as result of their energy states, which depend on its physical dimensions and act as recombination centers for carriers generated in the GaAs layers within the structure when they are exited with a femtosecond optical pump at 800 nm [10]. Additionally, MBE allows for the construction of semiconductor structures with atomically abrupt and flat interfaces that in conjunction with band-structure engineering permit the obtention of high-purity heterostructures embedding a two-dimensional electron gas (2DEG) [11]. In the heterostructures with 2DEG, carriers are confined to a very narrow layer of thickness smaller than De Broglie wavelength which can travel without scattering caused principally by impurities.…”

Section: Introductionmentioning

confidence: 99%

“…The speed of transistors has been increased over time. HEMTs have demonstrated the highest frequency of operation over 1.5 THz when a combination of techniques such as reducing gate length, material purity, and doping schemes are used in their fabrication [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Surface State Engineering for THz Nanodevices

Cortes-Mestizo¹,

Briones²,

Espinosa-Vega³

et al. 2020

Electromagnetic Materials and Devices

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This chapter is dedicated to study the semiconductor surface states, which combined with nanolithography techniques could result on remarkable properties of advanced nanodevices suitable for terahertz (THz) signal detection or harvesting. The author presents the use of low-dimensional semiconductor heterostructures for the development of the so-called self-switching diodes (SSDs), studying by simulation tool key parameters in detail such as the shape and size of the two-dimensional electron gas system. The impact of the geometry on the working principle of the nanodevice and the effects on current-voltage behavior will be described in order to acquire design guidelines that may improve the performance of the self-switching diodes when applied to low-power square-law rectifiers as well as elements in rectennas by appropriately setting the size of the components.

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MBE growth of high-mobility 2DEG

Cited by 10 publications

References 68 publications

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Semiconductor Surface State Engineering for THz Nanodevices

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