MBE growth of Eu- or Tb-doped GaN and its optical properties

Bang, Hyungjin; Morishima, Shin-ichi; Li, Zhiqiang; Akimoto, Katsuhiro; Nomura, Masaharu; Yagi, Eiichi

doi:10.1016/s0022-0248(01)02121-2

Cited by 63 publications

(47 citation statements)

References 11 publications

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“…40 as a W911-NF-04-1-0296 University of Florida consistent with previous reports that show a correlation between the 622nm emission and a majority of the Eu ions being in the 3+ state in the GaN, [22,29] with the Eu occupying substitutional Ga sites as determined by extended x-ray absorption fine structure measurements. [29] Note that the PL emission intensity is a maximum at lower Ga fluxes, consistent with the Eu occupying Ga sites. While the III-nitrides have proven quite successful for fabrication of blue and green light emitting devices, realization of red devices has been less successful due to the difficulties associated with the synthesis of the high-In-content InGaN needed to achieve red emission.…”

Section: Optical and Magnetic Properties Of Eu-doped Gallium Nitridesupporting

confidence: 85%

Optical Behavior of III-TM-N Materials and Devices

Zavada¹

2008

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Section: Optical and Magnetic Properties Of Eu-doped Gallium Nitridesupporting

confidence: 85%

Optical Behavior of III-TM-N Materials and Devices

Zavada¹

2008

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“…The majority of Eu ions in GaN host appear to occupy Ga substitutional sites, as might be expected, 6 although a recent Rutherford backscattering study indicates that some Eu ions may be displaced by a small amount from the on-site position. 7 Nyein et al have inferred the existence of different Eu-related optically active centers from the observation that the PL decay dynamics and thermal quenching process depend on the energy of excitation.…”

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confidence: 77%

Selectively excited photoluminescence from Eu-implanted GaN

Wang

Martin

O’Donnell

et al. 2005

Applied Physics Letters

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The intensity of Eu-related luminescence from ion-implanted GaN with a 10nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300°C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to D05-F27 (∼622nm), D05-F37 (∼664nm), and D05-F17 (∼602nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the D05-F27 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356nm, and a broad subedge absorption band centred at ∼385nm. Marked differences in the shape of the D05-F27 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.

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“…7 Previous measurements of the extended x-ray absorption fine structure show that Er 3+ and Eu 3+ dopants assume a substitutional Ga site with C 3 symmetry. 8,9 Sharp, otherwise forbidden 4f emission lines from Eu 3+ are allowed by symmetry breaking in the GaN host. Nyein et al recently performed time-resolved photoluminescence ͑PL͒ studies of these emission lines by using both above-and below-band gap excitation.…”

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confidence: 99%

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

et al. 2005

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Photoluminescence ͑PL͒ excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence ͑ 5 D 0 → 7 F 2 ͒ from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength-and temperature-dependent energy transfer influenced by intrinsic and Eu 3+ -related defects. Native and rare earth-induced defects participate in the energy transfer processes that lead to red light emission in GaN:Eu. 6 An impurity band spreading 370 meV below the conduction band of GaN:Eu has been observed to arise from such defects. 7 Previous measurements of the extended x-ray absorption fine structure show that Er 3+ and Eu 3+ dopants assume a substitutional Ga site with C 3 symmetry. 8,9 Sharp, otherwise forbidden 4f emission lines from Eu 3+ are allowed by symmetry breaking in the GaN host. Nyein et al. recently performed time-resolved photoluminescence ͑PL͒ studies of these emission lines by using both above-and below-band gap excitation. 10 Photoluminescence excitation ͑PLE͒ spectroscopy indicated the impurity band is involved in the energy transfer between the GaN host and the Eu 3+ dopants. In this paper, visible and UV wavelength PLE measurements of GaN:Eu evaluate the excitation wavelength-dependent energy transfer between the GaN host or defects and the Eu 3+ dopants, while temperature-dependent, time-resolved PL ͑TRPL͒ measurements investigate energy transfer and carrier relaxation dynamics.A Eu-doped GaN film was deposited on a p-Si ͑111͒ substrate by solid-source MBE. A thin GaN buffer layer was first deposited at a substrate temperature of 600°C before the main growth took place at 800°C for about 2 h. Details of the growth conditions can be found elsewhere. 4 The Eu cell temperature was 400°C, resulting in a Eu concentration of 8.8ϫ 10 20 cm -3 ͑1 at. % ͒ estimated by secondary ion mass spectrometry. The thickness of the GaN:Eu layer is approximately 2.4 µm. PL spectra were excited by a He-Cd laser ͑E p = 3.815 eV͒, and the tunable light source for PLE spectroscopy was a xenon arc lamp dispersed through an Acton 150 mm monochromator. The luminescence was analyzed by a 0.75 m focal length SPEX single grating monochromator and detected by a thermoelectrically cooled photomultiplier tube ͑Hamamatsu R928͒. Standard lock-in techniques were used for collecting both PL and PLE signals. The pulsed laser source for TRPL measurements was an optical parametric amplifier ͑OPA͒, pumped by a 1 kHz regenerative amplifier seeded by an 80 MHz Ti:sapphire oscillator operating at 800 nm. In this experiment the OPA was tuned between E p = 3.02-4.14 eV while maintaining a pulse intensity of 600 J/cm 2 and pulse width less than 200 fs. The luminescence from the GaN:Eu sample was collected by two UV lenses, spectrall...

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MBE growth of Eu- or Tb-doped GaN and its optical properties

Cited by 63 publications

References 11 publications

Optical Behavior of III-TM-N Materials and Devices

Optical Behavior of III-TM-N Materials and Devices

Selectively excited photoluminescence from Eu-implanted GaN

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

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