MBE growth and characterization of Mn-doped InN

Abstract

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy Appl. Phys. Lett. 103, 162110 (2013); 10.1063/1.4826094 N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxyThe majority of InN doping studies have primarily focused on Mg, as it has previously been used to successfully realize p-type GaN. Here, we consider an alternative dopant-Mn-as a possible acceptor candidate in InN. Magnetotransport, x ray photoelectron spectroscopy, and photoluminescence were used to investigate electrical and optical properties of a series of Mn-doped InN thin films grown using molecular beam epitaxy. Evidence of acceptor behavior was observed only for moderate (10 17 cm À3 ) doping levels. At a doping level around 10 17 cm À3 , light hole features appear in the quantitative mobility spectrum analysis, the surface Fermi level shifts downwards towards the valence band, and low energy features appear in the low temperature photoluminescence spectra.