2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
DOI: 10.1109/iciprm.2006.1634175
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MBE Growth and Characteristics of Self-Assembled InAs/InGaAs/GaAs Quantum Dots

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“…Subsequently, as the wetting layer gets thicker, the elastic or strain energy builds up and is relaxed either through dislocation nucleation or surface roughening, thereby resulting in the formation of islands atop the wetting layer. Hence, in summary, the catalyst for the 2D-to-3D growth transition is the relaxation of the strain energy which increases with increasing thickness of the mismatched epitaxial layers, and the occurrence of 2D-to-3D transitions has been observed in a myriad of mismatched heteroepitaxial systems such as InAs/InGaAs/GaAs [69], InAlAs/AlGaAs [70], and InAs/InP [71].…”
Section: Vapour-phasementioning
confidence: 99%
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“…Subsequently, as the wetting layer gets thicker, the elastic or strain energy builds up and is relaxed either through dislocation nucleation or surface roughening, thereby resulting in the formation of islands atop the wetting layer. Hence, in summary, the catalyst for the 2D-to-3D growth transition is the relaxation of the strain energy which increases with increasing thickness of the mismatched epitaxial layers, and the occurrence of 2D-to-3D transitions has been observed in a myriad of mismatched heteroepitaxial systems such as InAs/InGaAs/GaAs [69], InAlAs/AlGaAs [70], and InAs/InP [71].…”
Section: Vapour-phasementioning
confidence: 99%
“…Park et al grew self-assembled InAs QDs on GaAs substrates using the S-K growth method at about 500 °C [69]. Initial growth was via the layer-by-layer process, however, as the thickness of the epitaxial layer increased, a transition to the island growth process occurred to lower the strain energy.…”
Section: Vapour-phasementioning
confidence: 99%