MBE grown, visible, surface emitting harmonic generation lasers

Williams, Robin L.; Chatenoud, F.; Normandin, R.

doi:10.1016/0022-0248(91)91134-v

Cited by 6 publications

(1 citation statement)

References 3 publications

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“…1 Recently it has been suggested that piezoelectric quantum-well lasers operated under forward bias could be used in an integrated laser and blue-shifting waveguide electroabsorption modulator 2 or an integrated laser and frequency-doubling waveguide. 3 Design of such devices requires a knowledge of the behavior of the quantum-well structure as a function of current, particularly the confinement of high densities of charge carriers in a nonsquare well, and the screening of the internal piezoelectric field by those injected carriers. In this letter we examine the evolution of well shape with current by observing the spontaneous emission spectra of laser structures and comparing them with theoretical calculations.…”

Section: Laser Diodes In Piezoelectric Quantum-well Structuresmentioning

confidence: 99%

Laser diodes in piezoelectric quantum-well structures

Cooper

Westwood

Blood

1996

Applied Physics Letters

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We have determined the carrier density and internal electric field as a function of drive current in InGaAs quantum-well laser structures grown on GaAs (111)B substrates by fitting the spontaneous emission spectra observed through a top contact window using a self-consistent solution of Poisson’s and Schrödinger’s equations. At room temperature at threshold the internal field is still 50% of its initial value and as a result the quasi-Fermi levels are closer to the band edges of the well than in a square well, causing significant carrier loss through the barrier/waveguide material. We determine the loss by this route to be twice that for a similar device if the internal field was completely screened.

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Section: Laser Diodes In Piezoelectric Quantum-well Structuresmentioning

confidence: 99%