MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

doi:10.1007/s11664-016-4418-4

Cited by 5 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thermal deoxidation of the 20 × 20 mm 2 epi-ready GaAs substrates followed by ZnTe growth on them were done in the growth chamber of a Veeco GEN20MZ MBE system under the background pressure of 3-5 × 10 -10 Torr. The deoxidation of the protective oxide layer of an epi-ready GaAs (211)B substrate was performed under In flux according to a procedure given in a previous study [24]. Firstly, the substrate was heated to about 530 °C (measured by a band edge thermometry; BandiT).…”

Section: Znte Film Growth On Epiready Gaas (211)b Substratementioning

confidence: 99%

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

View full text Add to dashboard Cite

Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 μm thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 × 10 7 cm −2 was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.

show abstract

Section: Znte Film Growth On Epiready Gaas (211)b Substratementioning

confidence: 99%

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

View full text Add to dashboard Cite

show abstract

“…The growth details were similar to those described elsewhere [11,12]. Briefly, CdTe epilayer was grown by molecular beam epitaxy (MBE) system operated in a class 1000 cleanroom environment on a 3-inch epi-ready, semi-insulating (2 1 1)B GaAs wafer after thermal stripping of the oxide layer.…”

Section: Molecular Beam Epitaxy (Mbe) Growth Of Cdtementioning

confidence: 99%

Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate

Polat¹,

Arı²,

Öztürk³

et al. 2017

Mater. Res. Express

Self Cite

View full text Add to dashboard Cite

Reciprocal space mapping (RSM) has been widely utilized to find out the microstructure and deviations from ideal crystal structures, present in materials ranging from polycrystalline to single-crystalline [1]. RSM can deliver further structural information as compared to conventional methods such as rocking curve (RC) scan due to its two-dimensional (2D) characteristics [2]. This particularly provides a significant advantage when applied to epitaxial thin films having large lattice mismatches. Nondestructive measurement of the threading-dislocation (TD) densities, for instance, relies on prediction of individual parameters, such as domain tilt and twist, of a mosaic layer structure [3]. In addition to the large lattice mismatch, some epitaxial heterostructures have also the low-symmetry surface characteristics. CdTe/(2 1 1)B GaAs is obviously one of the outstanding examples of these types of structures. Structural analysis of the high-index oriented zinc-blende epitaxial layers when combined with the large lattice mismatch becomes much more challenging. Furthermore, the surface normal of epilayer lattice tilts approximately 3° with respect to that of substrate [4]. Each one of these factors make the structure being examined extremely difficult to analyze, especially with the traditional x-ray diffraction (XRD) methods. As a result, a limited number of studies so far have been dedicated to understanding the structural properties of this heterostructure [5][6][7][8]. The common point of all these studies is that they were carried out in real space. However, one advantageous option can be mapping in reciprocal space to characterize such heterostructures. At present, the technique has been separately applied to the high-index orientation [9] or to the large lattice mismatched heterostructures [10].In this letter, the RSM technique is effectively employed to study the lattice tilting, the lattice mismatches, the shear strain produced by the low-symmetry surface and the screw dislocation density of CdTe epilayer grown on (2 1 1) oriented GaAs substrate. Experimental procedure Molecular beam epitaxy (MBE) growth of CdTeThe growth details were similar to those described elsewhere [11,12]. Briefly, CdTe epilayer was grown by molecular beam epitaxy (MBE) system operated in a class 1000 cleanroom environment on a 3-inch epi-ready, semi-insulating (2 1 1)B GaAs wafer after thermal stripping of the oxide layer. Initially, a nucleation layer also

show abstract

“…1,5,6 It is crucial to prevent further surface damage during thermal deoxidation, as it could compromise the quality of the subsequently grown epilayers. 7,8 Studies have reported that the reproducibility of AlGaInAs-based lasers can be enhanced with proper substrate deoxidation. 9 Reflection high-energy electron diffraction (RHEED) is typically employed to monitor surface reconstruction and determine oxide desorption from substrates.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Thermal annealing is a general approach to obtaining an epiready surface on substrates for the subsequent growth . However, the deoxidation duration and temperature are intricate and sometimes controversial, depending on the oxide thickness and structure of substrates. ,, It is crucial to prevent further surface damage during thermal deoxidation, as it could compromise the quality of the subsequently grown epilayers. , Studies have reported that the reproducibility of AlGaInAs-based lasers can be enhanced with proper substrate deoxidation …”

Section: Introductionmentioning

confidence: 99%

Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control

Shen,

Zhan,

Tang

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Substrate oxidation is inevitable when exposed to ambient atmosphere during semiconductor manufacturing, which is detrimental to the fabrication of state-of-the-art devices. Optimizing the deoxidation process in molecular beam epitaxy (MBE) for random substrates poses a multidimensional challenge and is sometimes controversial. Due to variations in substrates and growth processes, the determination of the deoxidation condition heavily relies on the individual's expertise, yielding inconsistent results. This study employs a machine learning model that integrates interpolation and vision transformer (Interpolation-ViT) techniques. The model utilizes reflection high-energy electron diffraction videos as input to predict the status of the substrate, enabling automated deoxidation within a controlled architecture for various substrates. Furthermore, we highlight the potential of models trained on data from specific MBE equipment to achieve high-accuracy deployment on different pieces of equipment. In contrast to traditional methods, our approach holds exceptional value, as it standardizes deoxidation temperatures across diverse equipment and substrates. This significantly advances the standardization of the semiconductor process. The concepts and methods presented are expected to revolutionize semiconductor manufacturing processes in the optoelectronic and microelectronic industries.

show abstract

MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

Cited by 5 publications

References 9 publications

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate

Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control

Contact Info

Product

Resources

About