Maximum rapidly-switchable power density in junction triodes

Science and research policy at the end of Moore’s law

“…Building on Bell Labs' core theoretical and technological advancements, subsequent contributions to the art of semiconductor manufacturing came from both large, established companies and small, young firms, which recent research indicates uniquely benefited from access to Bell Labs' technology made possible by the consent decree 5 . By the close of the 1950s, even as semiconductor shipments averaged annual growth rates of over 50%, some researchers began to project limits to progress in BJT transistors and their applications, at best two orders of magnitude away [6][7][8][9] . Many of these early warnings rested on erroneous assumptions about limits to transistor feature size, but semiconductor electronics faced pressing reliability challenges at the circuit level.…”

Cold Cathode Microwave Devices

“…It can be shown [22,23] that, for triode-and transistor-like three-terminal devices, the maximum power P m that can be delivered to a load is…”

Fundamental performance limitations for transit-time devices: A zeroth-order analysis

“…Trade-offs between the output power, gain, frequency and impedance level have been shown to be related to material parameters by Early (1959) and Johnson (1965), who suggest general relations to show the performance limits of transistors and other transit-time devices regardless of design details. In their analyses 100% DC-to-RF power conversion efficiency is assumed.…”