MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
Fabia F. Athena,
Moses Nnaji,
Diego Vaca
et al.
Abstract:A Ti2AlN MAX phase layered thin film electrode and oxygen getter layer for HfO2‐based two‐terminal memristors is presented. The Ti2AlN/HfOx/Ti memristor devices exhibit enhanced resistive switching performance, including an ultra‐low reset current density (< 10−8 MΩ cm2), substantial on‐off ratio (≈ 6000), excellent multi‐level functionality (≈ 9 distinct states), impressive retention (up to 300 °C), and robust endurance (>200 million) as compared to conventional TiN and other alternative materials based… Show more
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