Matrix analysis of distributed semiconductor circuit models

Hennig, F.; Sah, C. T.

doi:10.1016/0038-1101(73)90211-6

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1974

1976

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Cited by 11 publications

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Tunnelling theories of non-volatile semiconductor memories

Ferris-Prabhu

1976

Phys. Stat. Sol. (a)

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The discovery that charge storage in layered insulator field effect transistors enables them to function to advantage as non‐volatile memory elements, has spurred widespread activity in the fabrication of many types of these devices. There is also much analytical work attempting to describe the device characteristics, particularly retention time, in terms of material and operational parameters. Here some of the different tunnelling theories that have been proposed are compared and discussed.

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