MatlSSE Microcryocooler

Olson, J R; Kaldas, G; Champagne, P; Roth, E; Nast, T

doi:10.1088/1757-899x/101/1/012025

Cited by 5 publications

(2 citation statements)

References 2 publications

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“…In addition, under certain circumstances SPER recrystallization produces a trace of defects [4,5]. Finally, SPER is strongly dependent on stress [6], and dopant and impurity concentrations [7]. Such stresses can be externally generated, but there is always an intrinsic component produced by the $2% volume expansion of the a-Si with respect to c-Si [8].…”

Section: Introductionmentioning

confidence: 99%

Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon

2015

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This work presents a multiscale approach to understanding the defect formation during the evolution of solid-phase epitaxy regrowth in Si. A molecular dynamics (MD) simulation technique has been used to elucidate the defect formation mechanisms, as well as to determine their nature. A hybrid lattice kinetic Monte Carlo (LKMC)-finite element method (FEM) model fed by the outcome of MD was subsequently implemented. It scales up the simulation times and sizes, while reproducing the important features of the defected regrowth predicted previously. FEM calculations provide the strain pattern due to the density variation between the amorphous and crystalline phases, which is then taken into account by the LKMC model by including the effect of the strain in the rates of recrystallization. Overall, this multiscale modeling provides a physical explanation of the generation of defects and its relation with the presence of strain. The model also captures the character of formed defects. It distinguishes two types: twins formed at {1 1 1} planes and dislocations produced by the collapse of the two recrystallization fronts. Simulation results are validated by comparing them with significant experiments reported in the literature.

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Section: Introductionmentioning

confidence: 99%

Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon

2015

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“…RTR has been widely used in many applications on bulk and thin film surfaces during laser processing [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46] and especially on semi-conductor materials. Due to the high spectral and spatial resolution of modern optical detectors and their non-destructive advantage, this technique is promising for monitoring ultra-short laser processing.…”

Section: Introductionmentioning

confidence: 99%

In situprobing of pulsed laser melting and laser-induced periodic surface structures formation by dynamic reflectivity

Huynh¹,

Semmar

2017

Surf. Topogr.: Metrol. Prop.

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The melting process and nanostructure formation induced by nanosecond and picosecond laser pulses on bulk silicon and copper thin film were studied by ex situ analysis and in situ real time reflectivity. Three different probing wavelengths (633, 473 and 326 nm) were used during the pump laser processing and were correlated to the beam parameters (pulse duration, laser fluence and number of laser shots) and copper thin film thickness. On a silicon surface using a KrF laser beam (27 ns, 1 Hz, 248 nm), the melting threshold was determined close to 700 mJ cm −2 and the melting duration increased from 10 to 130 ns as the fluence increased from 700 to 1750 mJ cm −2 . Nanostructures with a spatial period close to the laser wavelength were formed on both copper thin film and silicon substrate after nanosecond Nd:YAG laser (10 ns, 266 nm, 1 Hz) irradiation. In the picosecond regime, using an Nd:YAG laser (40 ps, 266 nm, 1 Hz), different nanostructures, from spikes to laser-induced periodic surface structures, were formed on 500 nm copper thin film and were analyzed with respect to the drop in dynamic reflectivity changes versus the number of laser shots.

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A research of micro-pulse tube cryocooler with displacer phase shifter

Guo

Pfotenhauer

Miller

et al. 2022

Applied Thermal Engineering

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MatlSSE Microcryocooler

Abstract: Abstract. Lockheed Martin Space Systems Company has built and delivered an engineering model microcryocooler to the Jet Propulsion Laboratory for use with instruments for deep space and earth science missions.

Cited by 5 publications

References 2 publications

Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon

Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon

In situprobing of pulsed laser melting and laser-induced periodic surface structures formation by dynamic reflectivity

A research of micro-pulse tube cryocooler with displacer phase shifter

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