Mathematical modeling of electric potential in semiconductors with heterogeneous dopant profile

Abstract

The theoretical modeling of electric field in semiconductors with heterogeneous doping profile has been done. The cases when electroconductivity changes with depth according to exponentional law or is described by Gaussian function have been considered. Theoretical justification has been giving by solving electrodynamic boundary value problem with certain boundary conditions. The expressions in the form of analytical function series for potential distribution at probe measurements have been obtained.Keywords: heterogeneous semiconductor, boundary value problem, electric potential, probe measurement 1150 V. V. Filippov and S. E. Luzyanin