Abstract:A computer model was used to predict the junction profile between magnetoresistive (MR) read sensor and hard bias element which is known to have an influence on head performance. Ion beam etching (IBE) rates as a function of incident beam angle for each material were experimentally determined for this model. Key process parameters such as stencil structure (e.g. height, shape, and etch rate of the photoresist), ion beam angle, and MR element structure were varied. A series of experiments have been performed to… Show more
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