2020 IEEE Ukrainian Microwave Week (UkrMW) 2020
DOI: 10.1109/ukrmw49653.2020.9252673
|View full text |Cite
|
Sign up to set email alerts
|

Mathematical Model of Microwave Devices on Resonant Tunneling Diodes for Practical Application in Radar and Electronic Systems

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
8
0

Year Published

2021
2021
2022
2022

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(8 citation statements)
references
References 16 publications
0
8
0
Order By: Relevance
“…Substituting ( 6) to (1), we obtain an equation for the total current in the NDR region: Analysis of (3), (5), and (7) shows that the total current I1 in the NDR region is a function of the drain current of transistor T0, which is an n-channel FET. For the existence of Substituting (4) to (1) gives the following equation for the total current in the NDR region:…”
Section: Two-terminal Ndr Circuitsmentioning
confidence: 99%
See 4 more Smart Citations
“…Substituting ( 6) to (1), we obtain an equation for the total current in the NDR region: Analysis of (3), (5), and (7) shows that the total current I1 in the NDR region is a function of the drain current of transistor T0, which is an n-channel FET. For the existence of Substituting (4) to (1) gives the following equation for the total current in the NDR region:…”
Section: Two-terminal Ndr Circuitsmentioning
confidence: 99%
“…Analysis of (3), (5), and (7) shows that the total current I 1 in the NDR region is a function of the drain current of transistor T 0 , which is an n-channel FET. For the existence of the NDR region, the transistor T 0 must have a negative threshold voltage.…”
Section: Two-terminal Ndr Circuitsmentioning
confidence: 99%
See 3 more Smart Citations