Materials science research of boron nitride obtained at high pressure and high temperature

Taniguchi, Takashi

doi:10.2109/jcersj2.20116

Cited by 8 publications

(3 citation statements)

References 35 publications

(27 reference statements)

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“…Exfoliation produces scalable few‐layer h ‐BN nanosheets directly from their bulk counterpart; nevertheless, the limitation on the control of the sheet length and thickness constitutes a fundamental obstacle. [ 2 ] The existing h ‐BN bulk crystals are typically synthesized through a metal‐assisted high‐pressure high‐temperature approach, [ 3 ] only acquiring a sample size of less than three millimeter. As a result, tremendous efforts have been devoted to the more promising film deposition methodologies.…”

Section: Introductionmentioning

confidence: 99%

Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors

Gao

Sun

et al. 2021

Advanced Optical Materials

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High quality hexagonal boron nitride (h‐BN) thick films are indispensable for practical deep‐ultraviolet (DUV) photodetector applications. However, the controllable synthesis of h‐BN films in terms of thickness and crystallinity often requires high growth temperatures, tedious chemical precursors and, catalytic transition metal substrates, that will eventually hinder their applicability. In this work, the direct growth of h‐BN films with thickness of 50–500 nm on silicon(100), sapphire, and quartz substrates by ion beam assisted deposition at a lower temperature (≈500 °C) without employing extra catalysis is reported. The as‐synthesized h‐BN thick films are stoichiometric, smooth, and continuous without obvious pinholes and cracks, consisting of nanocrystalline domains on the dielectric substrates, distinct from those grown on metallic substrates. More intriguingly, the DUV photodetector fabricated from a 500 nm thick h‐BN film on quartz substrate exhibits high peak responsivity (0.5 A W−1) with a ultrahigh on/off ratio of >103 at 204 nm, a high rejection ratio (R204nm/R250nm > 103), a large specific detectivity (6.92 × 109 Jones), and a sharp cutoff wavelength at 218 nm. The work herein demonstrates the great potential of this form of h‐BN thick films toward the development of DUV photodetectors.

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Section: Introductionmentioning

confidence: 99%

Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors

Gao

Sun

et al. 2021

Advanced Optical Materials

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“…The theoretical Vickers hardness ( H v ) of cBN is 60 GPa, second only to diamond (i.e., H v ≈ 100 GPa). The most prominent feature of cBN is related to its superior thermal stability and chemical inertness, making it extensively used for machining ferrous materials to overcome disadvantages of diamond, − in avoidance of the failure of superhard tools due to the occurrence of graphitization.…”

Section: Introductionmentioning

confidence: 99%

New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure

Han,

Ma,

et al. 2024

Crystal Growth & Design

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Cubic boron nitride (cBN) with superhardness exhibits many exceptional properties rivaling diamond and holds great promise for diverse applications such as advanced cutting tools and high-performance electronic devices, where high-quality single crystals are often highly demanded. However, the synthesis of its large single crystals has been a long-standing challenge, mainly due to a more complex reaction process involved in the growth of cBN when compared with that of diamond, making its growth mechanism largely elusive. In this work, we present a comprehensive investigation on the growth of cBN crystals through a seed method under high pressure using specially designed growth strategies with Li3N as a transport agent, leading to the discovery of the crucial role that the atomic transport rate plays in growing its crystals. The seed crystals are revealed to undergo a reversible cubic → hexagonal → cubic transition sequence at high temperature during a two-step compression process. In addition, the phase diagrams for the formation of cBN in different transport agents are also explored. These findings provide new insights into the mechanism for growing large cBN crystals.

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“…To this end, it is highly indispensable to explore high-performance and low-cost anticorrosive solutions with long-term service durability. 13 Hexagonal boron nitride (h-BN), a layered two-dimensional electrical insulator, exhibits extraordinary high-temperature stability, oxidation resistance, and excellent chemical inertness, 14 making it a promising candidate as a protective coating, especially used in harsh environments where other materials cannot be used. Attempts at using h-BN nanomaterials as additives have demonstrated an improved high-temperature resistance of the metal alloy matrix 15 and the corrosion resistance of galvanized steel.…”

Section: Introductionmentioning

confidence: 99%

Direct Growth of Hexagonal Boron Nitride Nanofilms on Stainless Steel for Corrosion Protection

Tang

Wang

Liu

et al. 2021

ACS Appl. Nano Mater.

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Protection of stainless steel from water, oxygen, and chloride ions is of crucial importance for diverse industrial fields; yet, it remains challenging to develop a proper solution with improved corrosion and oxidation resistance for long-term service durability. Here, we demonstrate the direct growth of hexagonal boron nitride (h-BN) nanofilms on the surface of stainless steel (ss304) by the magnetron sputtering method, serving as barrier coatings for protection in a corrosive environment. The obtained h-BN nanofilms are ∼200 nm in thickness, with a highly densified morphology, converting the hydrophilic surface of ss304 to a hydrophobic surface. These films exhibit excellent oxidation resistance at 600 °C in the atmosphere and enhanced anticorrosion performance as compared to the bare ss304. Moreover, they show robust and stable corrosion resistance when immersed in a 3.5 wt % NaCl electrolyte for over 10 weeks. The results suggest that the direct growth of h-BN nanofilms on ss304 holds great promise for corrosion inhibition and antioxidation of steel, therefore offering a feasible and effective route for long-term corrosion protection concerning practical applications of h-BN on industry-relevant surfaces.

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Materials science research of boron nitride obtained at high pressure and high temperature

Cited by 8 publications

References 35 publications

Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors

Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors

New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure

Direct Growth of Hexagonal Boron Nitride Nanofilms on Stainless Steel for Corrosion Protection

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