Difluorosilylene as a Precursor for the Chemical Vapour Deposition of Titanium Silicide.-A new method for preparing thin films of titanium silicide (III) by chemical vapour deposition (CVD) of difluorosilylene (II) and titanium tetrachloride (I) is reported. (II) is generated in situ with a yield of about 50% by reaction of SiF4 and elemental silicon at 1150 • C. Characterization of the thin films by Auger electron-and wave-length dispersion spectroscopy show titanium and silicon in a Ti:Si-ratio of 1:2, indicating a high purity of the coating. -(CHEN, C. C.; YU, J. L.; LEE, C. Y.; LIU, C. S.; CHIU, H. T.; J. Mater. Chem. 2 (1992) 9, 983-984; Dep. Chem., Natl. Tsing Hua Univ., Hsinchu, Taiwan 30043; EN)