Materials Aspects of Micro- and Nanoelectromechanical Systems

Zorman, Christian A.; Mehregany, Mehran

doi:10.1007/3-540-29838-x_7

Cited by 1 publication

(1 citation statement)

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“…We attributed the formation of the larger grains to the poly-Si seeding layer, which apparently reduced the number of nucleation sites in the early stages of PZT-PZN relaxor thin-film crystallization, which resulted in the formation of fewer but larger grains. 25,28 It is apparent from Fig. 3a that the PZT-PZN film grown without the poly-Si layer has a second phase, as evidenced by the large number of bright and small particles that cover the surface.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer

Fuentes-Fernandez

Salomon-Preciado

Gnade

et al. 2014

Journal of Elec Materi

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The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr 0.53 ,Ti 0.47 )O 3 -Pb(Zn 1/3 ,Nb 2/3 )O 3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 lW/cm 2 .

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Section: Resultsmentioning

confidence: 99%