2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2021
DOI: 10.1109/sispad54002.2021.9592592
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Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration

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(4 citation statements)
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“…Moreover, when there is an irregularity in the thickness of the 2D layer, such that there are regions where the thickness is greater than the critical thickness for remote interaction, epitaxy in those areas will not take place . All these reports, consistently stress the elimination of transferred vdW layers and highlight the importance of contamination-free, uniformly grown 2D layers as the ideal pathway for reliable remote epitaxy …”
Section: Discussionmentioning
confidence: 91%
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“…Moreover, when there is an irregularity in the thickness of the 2D layer, such that there are regions where the thickness is greater than the critical thickness for remote interaction, epitaxy in those areas will not take place . All these reports, consistently stress the elimination of transferred vdW layers and highlight the importance of contamination-free, uniformly grown 2D layers as the ideal pathway for reliable remote epitaxy …”
Section: Discussionmentioning
confidence: 91%
“…A reaction between the WSe 2 and the GaAs substrate can be clearly observed in the form of W-As and Ga-Se chemical states in the XPS. (f–h) Adapted with permission from ref . Copyright 2021 IEEE.…”
Section: Discussionmentioning
confidence: 99%
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