Abstract:Two IV–VI semiconductor alloys, Pb0.81Sn0.19Se and Pb0.8Sr0.2Se, are proposed for use in designing multiple quantum well (MQW) materials and devices for thermophotovoltaic (TPV) power conversion. These materials can be epitaxially grown on silicon substrates, so they offer the potential for a low cost TPV device manufacturing technology. MQW materials examples are provided for fabricating triple junction TPV devices for power conversion with a 1400°C radiator. Optimal n‐type and p‐type layer thicknesses for ea… Show more
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