Material proposal for 2D indium oxide

Kakanakova‐Georgieva, Anelia; Giannazzo, Filippo; Nicotra, Giuseppe; Cora, Ildikó; Gueorguiev, Gueorgui Kostov; Persson, Per O. Å.; Pécz, B.

doi:10.1016/j.apsusc.2021.149275

Cited by 52 publications

(49 citation statements)

References 27 publications

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“…Fig.1(a), the calculated In-In distance of 2.94 Å along z-direction, and 3.0 Å along xdirection, respectively, matches closely the experimental results from Ref [12]…”

supporting

confidence: 87%

“…Noteworthy, a variety of 2D structures might be expected to be stabilized, including those perceived as metastable, and being dictated by any specifics of deposition kinetics. 2D InO has been obtained in spatial confinement between SiC and graphene [12], and the projected atomic arrangement of the intercalated In atoms has been found to be in agreement with the In-…”

Section: Discussionmentioning

confidence: 65%

“…12 are underlined by intercalation of In atoms in the confined space between SiC and graphene. The projected atomic arrangement of the intercalated In atoms appears as perfectly square with both the out-of-plane and the inplane columnar distances reading 2.6 ± 0.1 Å[12].…”

mentioning

confidence: 88%

“…Particularly, 2D InO is perceived for being able to promote cutting-edge applications as to high-speed electronics by considering predictions for its outstanding electron mobility [8]. A more detailed study into the atomic structure of 2D InO is motivated by its recently reported experimental realization in spatial confinement by MOCVD [12] which has shown consistency with the structure of monolayer of InSe-type group III metal chalcogenides [11]. We further explore 2D structures of indium oxide with composition In 2 O 3 by involving a type of stable structure predicted previously for atomically thin 2D metal oxides of d-block elements such as hexagonal h-Sc 2 O 3 , h-V 2 O 3 , and h-Mn 2 O 3 [13], and h-Y 2 O 3 [14], and p-block elements such as h-Al 2 O 3 [15].…”

Section: Introductionmentioning

confidence: 99%

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Exploring 2D structures of indium oxide of different stoichiometry

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“…Fig.1(a), the calculated In-In distance of 2.94 Å along z-direction, and 3.0 Å along xdirection, respectively, matches closely the experimental results from Ref [12]…”

supporting

confidence: 87%

Section: Discussionmentioning

confidence: 65%

mentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

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Exploring 2D structures of indium oxide of different stoichiometry

et al. 2021

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“…Combining metal oxides with 2D nanomaterials to construct a heterostructure can combine the advantages of each other and overcome their respective shortcomings, thereby improving the sensing performance of the fabricated gas sensors. The combination of the metal oxide and 2D materials can drive transformations in the design and performance of 2D nanoelectronics devices, such as the graphene/2D indium oxide/SiC heterostructure [ 31 , 32 ]. Currently, the combination of metal oxides with graphene, transition metal chalcogenide, and other 2D materials to form heterojunction nanostructures for gas sensors have been studied widely, which have exhibited significantly enhanced sensing performance at room temperature [ 33 , 34 ].…”

Section: Introductionmentioning

confidence: 99%

The Combination of Two-Dimensional Nanomaterials with Metal Oxide Nanoparticles for Gas Sensors: A Review

et al. 2022

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Metal oxide nanoparticles have been widely utilized for the fabrication of functional gas sensors to determine various flammable, explosive, toxic, and harmful gases due to their advantages of low cost, fast response, and high sensitivity. However, metal oxide-based gas sensors reveal the shortcomings of high operating temperature, high power requirement, and low selectivity, which limited their rapid development in the fabrication of high-performance gas sensors. The combination of metal oxides with two-dimensional (2D) nanomaterials to construct a heterostructure can hybridize the advantages of each other and overcome their respective shortcomings, thereby improving the sensing performance of the fabricated gas sensors. In this review, we present recent advances in the fabrication of metal oxide-, 2D nanomaterials-, as well as 2D material/metal oxide composite-based gas sensors with highly sensitive and selective functions. To achieve this aim, we firstly introduce the working principles of various gas sensors, and then discuss the factors that could affect the sensitivity of gas sensors. After that, a lot of cases on the fabrication of gas sensors by using metal oxides, 2D materials, and 2D material/metal oxide composites are demonstrated. Finally, we summarize the current development and discuss potential research directions in this promising topic. We believe in this work is helpful for the readers in multidiscipline research fields like materials science, nanotechnology, chemical engineering, environmental science, and other related aspects.

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2D Oxides Realized via Confinement Heteroepitaxy

Türker

Dong

Wetherington

et al. 2022

Adv Funct Materials

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Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO 2 and bilayer Ga 2 O 3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O 2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga 2 O 3 ) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga 2 O 3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. The study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.

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Material proposal for 2D indium oxide

Cited by 52 publications

References 27 publications

Exploring 2D structures of indium oxide of different stoichiometry

Exploring 2D structures of indium oxide of different stoichiometry

The Combination of Two-Dimensional Nanomaterials with Metal Oxide Nanoparticles for Gas Sensors: A Review

2D Oxides Realized via Confinement Heteroepitaxy

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