Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation

Nandi, Uttam; Mohammadi, Mahdad; Lü, Hong; Norman, Justin; Gossard, A. C.; Alff, Lambert; Preu, Sascha

doi:10.1116/6.0000773

Cited by 6 publications

(5 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An example is the differing crystal structures of ErAs (rocksalt) and InGaAs (zincblende). A rotation of the ErAs unit cell with respect to that of the InGaAs brings the two lattices into registry, enabling the growth of coherent ErAs/InGaAs heterostructures [265]. Mismatch between thermal expansion coefficients in different layers of the heterostructure can induce strain upon sample cooling, which is then relaxed through defect formation, negatively impacting crystal quality.…”

Section: Future Directions: Thin Film Heterostructure Synthesis and C...mentioning

confidence: 99%

Advances in actinide thin films: synthesis, properties, and future directions

Vallejo¹,

Kabir²,

Poudel³

et al. 2022

Rep. Prog. Phys.

View full text Add to dashboard Cite

Actinide-based compounds exhibit unique physics due to the presence of 5f electrons and serve in many cases as important technological materials. Targeted thin film synthesis of actinide materials has been successful in generating high-purity specimens in which to study individual physical phenomena. These films have enabled the study of the unique electron configuration, strong mass renormalization, and nuclear decay in actinide metals and compounds. The growth of these films, as well as their thermophysical, magnetic, and topological properties, have been studied in a range of chemistries, albeit far fewer than most classes of thin-film systems. This relative scarcity is the result of limited source material availability and safety constraints associated with the handling of radioactive materials. Here, we review recent work on the synthesis and characterization of actinide-based thin films in detail, describing both synthesis methods and modeling techniques for these materials. We review reports on pyrometallurgical, solution-based, and vapor deposition methods. We highlight the current state-of-the-art in order to construct a path forward to higher quality actinide thin films and heterostructure devices.

show abstract

Section: Future Directions: Thin Film Heterostructure Synthesis and C...mentioning

confidence: 99%

Advances in actinide thin films: synthesis, properties, and future directions

Vallejo¹,

Kabir²,

Poudel³

et al. 2022

Rep. Prog. Phys.

View full text Add to dashboard Cite

show abstract

“…An example is the differing crystal structures of ErAs (rocksalt) and InGaAs (zincblende). A rotation of the ErAs unit cell with respect to that of the InGaAs brings the two lattices into registry, enabling the growth of coherent ErAs/InGaAs heterostructures [253]. Mismatch between thermal expansion coefficients in different layers of the heterostructure can induce strain upon sample cooling, which is then relaxed through defect formation, negatively impacting crystal quality.…”

Section: Future Directions: Thin Film Heterostructure Synthesis and C...mentioning

confidence: 99%

Advances in actinide thin films: synthesis, properties, and future directions

Vallejo¹,

Kabir²,

Poudel³

et al. 2022

Preprint

View full text Add to dashboard Cite

Actinide-based compounds exhibit unique physics due to the presence of 5f electrons, and serve in many cases as important technological materials. Targeted thin film synthesis of actinide materials has been successful in generating high-purity specimens in which to study individual physical phenomena. These films have enabled the study of the unique electron configuration, strong mass renormalization, and nuclear decay in actinide metals and compounds. The growth of these films, as well as their thermophysical, magnetic, and topological properties, have been studied in a range of chemistries, albeit far fewer than most classes of thin film systems. This relative scarcity is the result of limited source material availability and safety constraints associated with the handling of radioactive materials. Here, we review recent work on the synthesis and characterization of actinide-based thin films in detail, describing both synthesis methods and modelling techniques for these materials. We review reports on pyrometallurgical, solution-based, and vapor deposition methods. We highlight the current state-of-the-art in order to construct a path forward to higher quality actinide thin films and heterostructure devices.

show abstract

“…High output powers of 117 µW and conversion efficiency of 0.2% [66]. Breakdown at 100 kV cm −1 [67].…”

Section: Rh Doped Ingaas 1550mentioning

confidence: 99%

“…ErAs is another well-researched dopant used in both GaAs [66,[160][161][162] and InGaAs [65,67,145,[163][164][165], as it is known to work effectively as an ultrafast trapping site [163]. Early publications with ErAs discuss the creation of self-assembled metal nanoparticles or 'nanoislands' [160].…”

Section: Eras Materialsmentioning

confidence: 99%

See 1 more Smart Citation

Photoconductive emitters for pulsed terahertz generation

Bacon

Madéo

Dani

2021

J. Opt.

View full text Add to dashboard Cite

Conceived over 30 years ago, photoconductive (PC) emitters have proved essential in the development and spread of terahertz technology. Since then, not only have they been used extensively in a wide range of spectroscopic and imaging applications, they have also undergone significant improvements in performance, leading to their use for broadband or non-linear spectroscopy. In this review article, we provide an overview of the literature, highlighting the key milestones in the progression of the PC emitter. We also investigate the future of PC technology and review the existing challenges.

show abstract

Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation

Abstract: Paper published as part of the special topic on Honoring Dr. Art Gossard's 85th Birthday and His Leadership in the Science and Technology of Molecular Beam Epitaxy ARTICLES YOU MAY BE INTERESTED IN

Cited by 6 publications

References 34 publications

Advances in actinide thin films: synthesis, properties, and future directions

Advances in actinide thin films: synthesis, properties, and future directions

Advances in actinide thin films: synthesis, properties, and future directions

Photoconductive emitters for pulsed terahertz generation

Contact Info

Product

Resources

About