Material platforms for spin-based photonic quantum technologies

Atatüre, Mete; Englund, Dirk; Vamivakas, Nick; Lee, Sang-Yun; Wrachtrup, Joerg

doi:10.1038/s41578-018-0008-9

Cited by 608 publications

(665 citation statements)

References 203 publications

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“…For a review of similar topic on other optically active solid‐state systems, we refer the readers to ref. [] where a comprehensive summary of recent efforts on NV − centers in diamond, color centers in SiC, and quantum dots in van der Waals materials is given. In addition, recent review by Awschalom et al .…”

Section: Introductionmentioning

confidence: 99%

“…For a review of similar topic on other optically active solid-state systems, we refer the readers to ref. [49] where a comprehensive summary of recent efforts on NV − centers in diamond, color centers in SiC, and quantum dots in van der Waals materials is given. In addition, recent review by Awschalom et al [50] presents an extensive coverage of spin properties of various solid-sate systems, including NV − center, divacancy and silicon-vacancy defects in SiC, rare-earth ions in solids, and optically active donors in silicon, which are out of scope of the current work.…”

Section: Introductionmentioning

confidence: 99%

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Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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One ultimate goal of quantum information processing is to construct a quantum network for direct sharing of quantum information between distant parties based on stationary qubits for information storage and flying qubits for information transmission. This requires long‐lived quantum memories, efficient light–matter interface, and deterministic quantum gate operations. Among matter qubits, the electron spin of nitrogen vacancy center in diamond is an appealing option for its long coherence time at room temperature, deterministic microwave control, and optical preparation and readout of the qubit. However, its poor optical properties, including weak zero‐phonon‐line emission and large spectral diffusion, limit its potential for large‐scale deployment in quantum nodes. This has motivated the investigation for alternative quantum emitters that combine long‐time memory and coherent optical properties together. The emerging group‐IV split‐vacancy color centers in diamond, such as silicon‐vacancy, germanium‐vacancy, tin‐vacancy, and lead‐vacancy centers, are promising candidates of this ongoing exploration. These quantum emitters simultaneously possess microsecond spin coherence time and optically bright transitions with narrow linewidths. This review reports recent efforts on extending the spin coherence time of these color centers via temperature, strain, and charge control, which paves the road towards constructing solid‐based matter–photon interface for quantum network applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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“…Electrically controlled quantum devices can be envisioned for the detection of spin signals and single-photon excitation [22][23][24][25], however, integration of electrically and optically controlled devices appear at an early stage.SiC and other materials have been proposed as a platform for spin-based photonic quantum technologies. The light-matter interface relating quantum light states and the quantum emitter internal states (electron spin) can be used to constitute quantum circuits and networks [26], where quantum entanglement distribution and storage is performed [27]. Solid-state emitters can perform such interfacing role in a scalable and in a compact way due to their atom-and ion-like properties.…”

mentioning

confidence: 99%

“…Currently spin-photon interconnects are at the core of novel nanophotonic, nanoelectronics and spintronics architectures, used to transfer the information of electrons' spin to photons within an optical circuit. An immediate application of spin-photon interconnects is the establishment of integrated and on-chip novel sensing and imaging platforms at the micro and nanoscale, while a long-term application relies on the development of a quantum networks.Recent reviews have identified some prominent and emerging semiconductor materials for spin-photon interconnects, including spin defects in diamond, SiC, rare-earth ions in solids, and novel 2D quantum materials [26,28]. Here, the projected evaluation is focused only on criteria that encompass the availability of single-photon emission, long electron spin coherence time and electron spin coupling with nearby nuclear spins in a scalable platform.…”

mentioning

confidence: 99%

“…SiC and other materials have been proposed as a platform for spin-based photonic quantum technologies. The light-matter interface relating quantum light states and the quantum emitter internal states (electron spin) can be used to constitute quantum circuits and networks [26], where quantum entanglement distribution and storage is performed [27]. Solid-state emitters can perform such interfacing role in a scalable and in a compact way due to their atom-and ion-like properties.…”

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confidence: 99%

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Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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Quantum Antenna Arrays

Liberal

Ziolkowski

2022

Antenna and Array Technologies for Future Wireless Ecosystems

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Material platforms for spin-based photonic quantum technologies

Cited by 608 publications

References 203 publications

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Silicon carbide color centers for quantum applications

Quantum Antenna Arrays

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