Material epitaxy of AlN thin films

Liu, Shangfeng; Wang, Xinqiang

doi:10.1016/bs.semsem.2021.06.002

Cited by 2 publications

(3 citation statements)

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Section: Research On Pv Cells With Narrow Bandgapmentioning

confidence: 99%

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A review on current development of thermophotovoltaic technology in heat recovery

Chen,

Guo,

Pan

et al. 2024

Int. J. Extrem. Manuf.

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The burning of fossil fuels in industry results in significant carbon emissions, and the heat generated is often not fully utilized. For high-temperature industries, thermophotovoltaics (TPV) is an effective means of waste heat recovery. This review covers two aspects of high-efficiency TPV systems and industrial waste heat applications. At the system level, representative results of TPV complete systems, selective emitters and photovoltaic cells in the last decade are compiled, and key points of components to improve energy conversion efficiency is further analyzed. At the application level, the feasibility of TPV in high-temperature industrial applications is shown from the world waste heat utilization situation, and then the potential of TPV in waste heat recovery is illustrated with the steel industry as an example.

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Section: Research On Pv Cells With Narrow Bandgapmentioning

confidence: 99%

“…The growth method of GaInAs bottom cell is MOVPE [210]. Reprinted from [210], Copyright © 2021 Elsevier Inc. All rights reserved. (b) A method for preparing air-bridge thermophotovoltaic cells [179].…”

Section: Research On Pv Cells With Narrow Bandgapmentioning

confidence: 99%

A review on current development of thermophotovoltaic technology in heat recovery

Chen,

Guo,

Pan

et al. 2024

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

show abstract

“…Semi-polar (112 ¯2) AlN films are commonly grown on m-plane sapphire substrates due to the lack of large-size bulk AlN substrates. 11 Compared to polar (0002) AlN, the growth of high-quality single-phase semi-polar (112 ¯2) AlN is more difficult because of the anisotropic migration of adsorbed atoms on the growth surface. 12 Moreover, various crystal orientations such as (112 ¯2), (101 ¯3), and (101 ¯1) AlN are all possible to appear on m-plane sapphire substrates, resulting in polycrystalline AlN.…”

Section: Introductionmentioning

confidence: 99%