Material Engineering for Nano Structure Formation: Fabrication and Characterization

Adam, Tijjani; Hashim, U.; Sutikno, Sutikno; Dhahi, Th. S.; Nazwa, T.

doi:10.1016/j.proeng.2012.10.041

Cited by 2 publications

(3 citation statements)

References 2 publications

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“…The nano-structure formation was started by depositing polysilicon on the insulated substrate which is also followed by positive PR coating for pattern transfer process. After the PR coating, alignment exposure follows to realize the polysilicon microwire; after the microwire formation, the wire trimming process follows, and this is done through plasma oxidation (Adam et al, 2012a(Adam et al, , 2012b. The specific process is as follows.…”

Section: Methodsmentioning

confidence: 99%

“…In addition, techniques such as electron-beam lithography (EBL) and X-ray lithography (XRL), with significantly reduced wavelengths, have readily been used to achieve the high densities of devices desired by the semiconductor industry. However, the number of difficulties associated with the integration of these short-wavelength techniques in verylarge-scale integration (VLSI) manufacturing is high because the process of achieving high density might require what was aforementioned, and this will further require more sophistication of the machine and eventually a number of researchers will gain access to the desired equipment (Fogolari et al, 2013;Adam et al, 2012aAdam et al, , 2012b.…”

Section: Introductionmentioning

confidence: 99%

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Silicon nanowire fabrication

Adam

Hashim

2014

Microelectronics International

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Purpose – The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching. Design/methodology/approach – A 5-inch p-type silicon-on-insulator (SOI) coated with 250nm layer and Photoresist (PR) with thickness of 400nm is coated in order to make pattern transfer via binary mask, after the exposure and development, a resist pattern between 3 μm-5 μm were obtained, Oxygen plasma spreen was used to reduce the size of the PR to 800 μm, after this, the wafer with 800 μm was loaded into SAMCO inductively coupled plasma (ICP)-RIE and got silicoon microwire was obtained. Next, the sample was put into an oxidation furnace for 15, 30, 45 and 60 minutes and the sample was removed and dipped into a buffered oxide etch solution for five minutes to remove all the SiO2 ashes. Findings – The morphological characterization was conducted using scanning electron microscopy and atomic force microscopy. At terminal two, gold electrodes which were designated as source and drain were fabricated on top of individual NWs using conventional lithography electrical and chemical response. Once the trimming process has been completed, the device's current–voltage (I-V) characteristic was measured by using a Keithley 4200 semiconductor parameter analyser. Devices with different width of wires approximately 20, 40, 60 and 80 nm were characterized. The wire current variation as a function of the pH variation in voltage was investigated: pH monitoring for variations of pH values between 5 and 9. Originality/value – This paper provides useful information on novel and yet simple cost-effective fabrication of SiNW; as such, it should be of interest to a broad readership, especially those interested in micro/nanofabrication.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon nanowire fabrication

Adam

Hashim

2014

Microelectronics International

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“…In this study, we intended to improve, SiNWs electrical performance by treating them with CNT coated composites [ 2 , 3 ] because silica coated CNTs have been proved to be super-dielectric with a very large low-frequency dielectric coefficient and low dielectric loss. In order to improve the sensitivity of bio-molecule detection, the outer surface of the oxide layer of silicon nanowires (SiNWs) is generally equipped with a functional bio-interface consisting of receptor molecules [ 4 - 6 ]. This bio-interface plays a key role in the detection of target bio-molecules.…”

Section: Introductionmentioning

confidence: 99%

Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire

Adam

Hashim

2014

CNANO

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An aqueous ferric nitrate nonahydrate (Fe(NO3)3.9H2O) and magnesium oxide (MgO) were mixed and deposited on silicon nanowires (SiNWs), the carbon nanotubes (CNTs) formed by the concentration of Fe3O4/MgO catalysts with the mole ratio set at 0.15:9.85 and 600°C had diameter between 15.23 to 90nm with high-density distribution of CNT while those with the mole ratio set at 0.45:9.55 and 730°C had diameter of 100 to 230nm. The UV/Vis/NIR and FT-IR spectroscopes clearly confirmed the presence of the silicon-CNTs hybrid structure. UV/Vis/NIR, FT-IR spectra and FESEM images confirmed the silicon-CNT structure exists with diameters ranging between 15-230nm. Thus, the study demonstrated cost effective method of silicon-CNT composite nanowire formation via Iron-oxide Catalyze synthesis.

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Material Engineering for Nano Structure Formation: Fabrication and Characterization

Cited by 2 publications

References 2 publications

Silicon nanowire fabrication

Silicon nanowire fabrication

Novel Iron-oxide Catalyzed CNT Formation on Semiconductor Silicon Nanowire

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