Material design and evaluation of nanocomposite resist for next generation lithography

Recent Developments in the Chemistry of Cubic Polyhedral Oligosilsesquioxanes

“…There has also been study into the use and applications of derivatives of the type 186 with R groups other than ethyl, isobutyl, cyclopentyl, and cyclohexyl. This has included examinations of such materials for uses in ophthalmic devices (R = H), multilayer resists (R = Me or Ph), photosensitive resins (R = Me), carbon coating (R = Me), , polystyrene-based hybrids (R = Ph), dental resins (R = Ph), and chemically amplified resists (R = Ph) …”

Synthesis and characteristics of maleic anhydride-based photopolymers with pendant POSS groups for negative tone photoresists

“…The POSS-containing photoresists have been mainly researched for 157 nm lithography because of the good transparency of POSS at 157 nm [10][11][12]. Other examples include photoresists for 193 nm [13][14][15] and 248 nm [16][17][18][19] lithography, while the study of g-/h-/i-line photoresists, which have long been commonly used in the industry, are further limited [20][21][22]. Chang and co-workers reported pendant POSS-containing copolymers for negative-tone photoresists using mercury short arc lamp [20,21].…”