Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

Guo, Zilu; Wang, Wenjuan; Li, Yangjun; Qu, H.; Fan, Liuyan; Chen, Xiren; Zhu, Yicheng; Yuan, Gu; Wang, Yajie; Zheng, Changlin; Chen, Pingping; Lü, Wei

doi:10.1109/ted.2022.3188242

Cited by 3 publications

(4 citation statements)

References 23 publications

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“…Zilu Guo et al [ 91 ] grew the InGaAs/InP SAGCM structure on an InP substrate by the MBE system ( Figure 36 ), and deep low-temperature PL spectra were employed to clarify the effect of the material point defect on the dark current of the APDs. From the PL result, there is deep energy level defect in the InGaAs absorption region, which is most likely produced by the point defect from the MBE growth procedure.…”

Section: Research Progress For Ge(gesn) and Ingaas Swir Apdsmentioning

confidence: 99%

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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Section: Research Progress For Ge(gesn) and Ingaas Swir Apdsmentioning

confidence: 99%

“… Schematic illustration for InGaAs/InAlAs SAGCM APDs. Reproduced with permission from [ 91 ], IEEE, 2022. …”

Section: Figurementioning

confidence: 99%

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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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“…The APD consists of two main components: an absorption layer that absorbs photons to generate photoinduced carriers and a carrier multiplication layer utilizing the avalanche multiplier effect [7,8]. In recent years, there has been growing interest in the research on APDs employing a separation structure with InP as the multiplier layer and InGaAs as the absorption layer for improved performance [9,10]. However, the ratio of electron-hole impact ionization coefficient (k) of InP is as high as 0.3-0.5 [11,12].…”

Section: Introductionmentioning

confidence: 99%

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Ke,

Wang,

Huang

et al. 2024

Phys. Scr.

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The avalanche photodiode (APD) is a prototypical example of a fast and high-gain detector, particularly in the infrared band, where it plays a crucial role in both military and civil optoelectronic devices. The combination of indium gallium arsenide (InGaAs) and silicon (Si) offers an ideal solution for achieving high-performance APDs. For traditional InGaAs/Si APDs, the incorporation of a p-Si charge modulation layer between InGaAs and Si is necessary for electric field modulation. This ensures that a high electric field is maintained in the multiplication layer while keeping it low in the absorption layer. However, the preparation of the p-Si charge modulation layer necessitates a tedious and expensive ion implantation process. Besides, the ion implantation process can also lead to material surface contamination that significantly affects the performance of the device. In this paper, an InGaAs/Si APD without the charge layer is reported. This approach is based on semiconductor direct bonding technology, wherein a groove ring is introduced into the bonding interface to replace the charge layer to regulate the electric field distribution. The electric field of the absorption layer and the multiplier layer is controlled by adjusting the number of grooved rings. By introducing 11 grooved rings into the bonding interface, we achieve a remarkable gain bandwidth product of 88.55 GHz. These findings hold significant implications for the future development of non-charge layer InGaAs/Si APDs with high-gain bandwidth products.

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InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation

Unal,

Demir

2023

Results in Optics

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Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

Cited by 3 publications

References 23 publications

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation

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