Material constants extraction for AlScN thin films using a dual mode baw resonator

Parsapour, Fazel; Pashchenko, Vladimir; Nicolay, Pascal; Murali, Paul

doi:10.1109/memsys.2018.8346667

Cited by 3 publications

(3 citation statements)

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“…It can be synthesized up to approximately x ≃ 0.41 by reactive DC or RF magnetron sputtering and is known to have outstanding electroacoustic properties, surpassing reported values for all other group-III nitrides. [1][2][3][4][5][6][7][8][9][10] The electroacoustic properties of (Al,Sc)N depend strongly on the Sc concentration, which offers an additional degree of freedom for adjusting, e.g., the phase velocity and electromechanical coupling in the design of resonator devices. 11,12 Experimentally, elastic and piezoelectric tensor components have been acquired from acoustic resonance experiments [1][2][3][4][5] or Brillouin scattering [6][7][8] on (Al,Sc)N thin films with usually low Sc concentrations.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10] The electroacoustic properties of (Al,Sc)N depend strongly on the Sc concentration, which offers an additional degree of freedom for adjusting, e.g., the phase velocity and electromechanical coupling in the design of resonator devices. 11,12 Experimentally, elastic and piezoelectric tensor components have been acquired from acoustic resonance experiments [1][2][3][4][5] or Brillouin scattering [6][7][8] on (Al,Sc)N thin films with usually low Sc concentrations. Recently, the full set of electroacoustic properties was determined experimentally from Al 1−x Sc x N thin films in a large range of compositions, 0 ≤ x ≤ 0.32, from the same material source using Rayleigh-type waves in SAW resonators.…”

Section: Introductionmentioning

confidence: 99%

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First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N

Urban,

Ambacher,

Elsässer

2020

Preprint

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We study the electroacoustic properties of aluminum scandium nitride crystals Al1−xScxN with the metastable wurtzite structure by means of first-principles calculations based on density functional theory. We extract the material property data relevant for electroacoustic device design, namely the full tensors of elastic and piezoelectric constants. Atomistic models were constructed and analyzed for a variety of Sc concentrations 0 ≤ x ≤ 50%. The functional dependence of the material properties on the scandium concentration was extracted by fitting the data obtained from an averaging procedure for different disordered atomic configurations. We give an explanation of the observed elastic softening and the extraordinary increase in piezoelectric response as function of Sc content in terms of an element specific analysis of bond lengths and bond angles.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N

Urban,

Ambacher,

Elsässer

2020

Preprint

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“…Parsapour et al determined c 33 and c 44 of ScAlN, which were derived from the cylinder longitudinal mode and thickness shear mode, by using a dual mode bulk acoustic wave resonator with a tilted c-axis oriented film [ 19 ]. The tilted c-axis oriented ScAlN film was grown on a non-electrode, i.e., insulating layer.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Material Constants of CaTiO3 Doped (K,Na)NbO3 Film by MEMS-Based Test Elements

et al. 2018

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A CaTiO3-doped (K,Na)NbO3 (KNN-CT) film is a lead-free piezoelectric film that is expected to substitute Pb(Zr,Ti)O3 (PZT) film in piezoelectric micro electro mechanical systems (MEMS). However, the full set of the material constants (elastic constants, piezoelectric constants and dielectric constants) of the KNN-CT film have not been reported yet. In this study, all the material constants of a sputter-deposited blanket KNN-CT film were investigated by the resonance responses of MEMS-based piezoelectric resonators and the phase velocities of leaky Lamb waves on a self-suspended membrane. The phase velocities measured by a line-focus-beam ultrasonic material characterization (LFB-UMC) system at different frequencies were fitted with theoretical ones, which were calculated from the material constants, including fitting parameters. A genetic algorithm was used to find the best-fitting parameters. All the material constants were then calculated. Although some problems arising from the film quality and the nature of deliquescence are observed, all the material constants were obtained exhibiting accuracy within 16 m/s in the phase velocity of leaky Lamb wave.

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Integrated Magnetics and Magnetoelectrics for Sensing, Power, RF, and Microwave Electronics

Sun

2021

IEEE J. Microw.

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As the rapid development of integrated magnetic and magnetoelectric, numerous novel devices including high performance on-chip transformers, inductors, filters, antennas, and sensors with unique advantages in power efficiency, size and tunability, etc. have been demonstrated. In this review, an overview of the development of magnetism and magnetoelectric will be firstly given. The conceptual illustration and materials used in integrated magnetoelectric will then be presented. Selections of on-chip devices from literatures will be shown to exemplify the integrated magnetic and magnetoelectric applications. Finally, the prospect and the direction of the future research will be discussed in the conclusion.INDEX TERMS Magnetic, magnetoelectric, integrated devices, high frequency, sensing.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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Material constants extraction for AlScN thin films using a dual mode baw resonator

Cited by 3 publications

References 10 publications

First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N

First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N

Investigation of Material Constants of CaTiO3 Doped (K,Na)NbO3 Film by MEMS-Based Test Elements

Integrated Magnetics and Magnetoelectrics for Sensing, Power, RF, and Microwave Electronics

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