Material Characterization and Warpage Modeling for Power Devices Active Metal Brazed Substrates

Mirone, Giuseppe; Sitta, Alessandro; D’Arrigo, Giuseppe; Calabretta, Michele

doi:10.1109/tdmr.2019.2932971

Cited by 21 publications

(8 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Warpage variations can induce mechanical fatigue during the lifetime and represent a limiting factor for reliability. 274,275 In addition, they can even cause cracking of the substrate and rupture of power devices.…”

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

“…Moreover, the CTE of each material varies greatly†††††††; these problems generate asymmetrical distributions of stress/strain resulting in overall warpage. Warpage variations can induce mechanical fatigue during the lifetime and represent a limiting factor for reliability 274,275 . In addition, they can even cause cracking of the substrate and rupture of power devices.…”

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

See 1 more Smart Citation

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

View full text Add to dashboard Cite

Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

show abstract

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

Section: Other Design and Operational Considerations Related To Relia...mentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

View full text Add to dashboard Cite

show abstract

“…The desired temperature profiles have been reproduced during warpage measurement, heating sample by the infrared heater and cooling with compressed air. More detailed method explanation has been proposed in [7,9]. Warpage has been monitored in temperature, according to thermal profiles described in Sect.…”

Section: Warpage Measurementsmentioning

confidence: 99%

Analysis of Warpage Induced by Thick Copper Metal on Semiconductor Device

Calabretta

Sitta

Oliveri

et al. 2021

Lecture Notes in Mechanical Engineering

Self Cite

View full text Add to dashboard Cite

Electrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional compound such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (~20 µm) copper layer. Warpage has been experimental characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. A linear Finite Element Model (FEM) has been developed to predict the geometrically stress-curvature relation, comparing results with analytical models.

show abstract

“…One way to relieve the stress and strain under high temperatures is replacing substrate materials with low modulus materials such as direct bonded aluminum (DBA) [8] and insulated metal baseplate (IMB) [9]. Another way is to improve the manufacturing process to enhance the bonding strength of the material interface by applying thick printed copper (TPC) technology [10] and active metal brazing (AMB) [11]. The other method is to optim ize the structure of the copper layer, which is discussed in this paper.…”

Section: Introductionmentioning

confidence: 99%

A Stress-Relieved Method Based on Bottom Pattern Design Considering Thermal and Mechanical Behavior of DBC Substrate

et al. 2022

View full text Add to dashboard Cite

Traditionally, reliability-improved methods like etched dimples are set at the edge of the copper pattern to relieve the thermal-mechanical stress on direct bonded copper (DBC). When the copper ratio of the top copper pattern is less than the copper ratio of the bottom copper pattern, these methods are less effective at the inner edges of the top ceramic interface where the initial crack appears. Currently, no explanation is found for this phenomenon and other solutions should be taken to this problem. Hence, this paper analyzed the mechanism of the phenomenon and proposed a bottom pattern design to solve the problem. Based on a bi-material model and FE analysis, it can be found that the stress concentration on the top ceramic interface is caused by the opposite bending actions on the two ceramic interfaces. To eliminate the geometrical difference between two copper layers, Pa rallel dimple traces are used on the bottom instead of mirror-copied gap on the consideration of thermal resistance and mechanical strength. The parameters of dimple trace were chosen by simulations on stress-strain results under thermal cycling and therma l resistance calculations in a module packaging. FE results show that the bottom dimple trace with a diameter of 0.4mm and a gap of 2mm can adjust the thermal-induced strain behavior of the singularities at the top copper to be even and sacrifices only a 2% thermal resistance rise of the module packaging. Life prediction model based on strain shows that the bottom design can improve the life time of the substrate. The thermal cycling test result on sample DBC and thermal resistance measurement on module packaged by DBC with bottom pattern design verify the FE analysis. This method can be widely used on the packaging design of power module using stand -alone DBC substrate.

show abstract

Material Characterization and Warpage Modeling for Power Devices Active Metal Brazed Substrates

Cited by 21 publications

References 6 publications

The role of power device technology in the electric vehicle powertrain

The role of power device technology in the electric vehicle powertrain

Analysis of Warpage Induced by Thick Copper Metal on Semiconductor Device

A Stress-Relieved Method Based on Bottom Pattern Design Considering Thermal and Mechanical Behavior of DBC Substrate

Contact Info

Product

Resources

About