Material characteristics of perovskite manganese oxide thin films for bolometric applications

Abstract

We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (Tp) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as Tp increases.

Magnetocaloric effect and temperature coefficient of resistance of La0.85Ag0.15MnO3epitaxial thin films obtained by polymer-assisted deposition

“…The results are summarized in table 2. As expected, a deviation in the 'S M (H,T) curves occurs in the temperature range below 250 K, where the system is in an almost saturated ferromagnetic state [8]. However, the of ∆ܵ ெ ௫ from resistivity is in good agreement with the values obtained from the magnetization curves in the temperature region ΔT~GT FWHM , during the establishment of ferromagnetic order.…”

On conduction mechanism in paramagnetic phase of Gd based manganites

“…This class of materials has been in the forefront of material research for three decades or so. Among them manganites occupy a special position because of its application potential as catalysts, as electrode materials and in various other applications like bolometer (Pedersen and Libby 1972;Goyal et al 1997;Venkatesan et al 1998;Coey and Viret 1999). Manganites are mixed valence manganese oxides.…”

Improved properties of epitaxial YNixMn1−xO3 films by annealing under high magnetic fields

“…Such a slight increase of the transition temperatures Tc under non-field annealing is not surprising since the post deposition annealing can lead to an increase of the oxygen content of the films, optimizing the ratio Mn 3+ /Mn 4+ [7][8]12]. As we see, the enhancement of Tc resulting from non-field annealing is quite small compared to the magnetic field annealing process, as presented in Table 1.…”