Material and Si-based diode analyses of sputtered ZnTe thin films

Fast and Regulated Zinc Deposition in a Semiconductor Substrate toward High‐Performance Aqueous Rechargeable Batteries

“…It exhibits the lowest electron affinity and ultrafast charge separation capabilities among the series of semiconductor materials, suggesting accelerating charge transfer kinetics. [ 22 ] Importantly, ZnTe shows higher electronic conductivity (2.45 × 10 −4 S cm −1 ), [ 23 ] than ZnSe (2 × 10 −9 S cm −1 ) [ 24 ] and ZnS (1 × 10 −10 S cm −1 ). [ 25 ] Thus, ZnTe is promised to be zincophilic layer with fast charge transfer kinetics to guide Zn 2+ deposition.…”

Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method

“…For direct band gap materials, optical band gap energy ( E g ) can be determined using Tauc's direct optical transition model [ 33 ], given as follows: where α is the absorption coefficient, hν is photon energy, and A is a constant depending on the optical transition probability. Through equation (1) , it can be known that there is a linear relationship between ( αhν ) 2 and hν , which can be used to calculate the value of E g .…”