Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Delmas, M.; Debnath, M. C.; Liang, Baolai; Huffaker, Diana L.

doi:10.1016/j.infrared.2018.09.012

Cited by 15 publications

(33 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further adjustment of the In and Sb shutter opening times could be made to reduce the thickness of the InSb interface layers, although it has been shown in Ref. [27] that exposing the InAs layer to an Sb incident flux to form an "InSb-like" interface via Sb-for-As exchange suffices to obtain a strain-compensated SL in the case of thinner InAs layer.…”

Section: Xrd and Pl Measurementsmentioning

confidence: 99%

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Delmas¹,

Kwan²,

Debnath³

et al. 2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly straincompensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained.Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection.

show abstract

Section: Xrd and Pl Measurementsmentioning

confidence: 99%

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Delmas¹,

Kwan²,

Debnath³

et al. 2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The dark current density of the nonbarrier Ga-based T2SL PDs is roughly in the range of 10 À5 -10 À7 A cm À2 (with some higher outliers) under an applied bias of 50-200 mV for intermediate temperatures of 70-99 K in the MWIR range. [101,111,181,[215][216][217][218] The best performing T2SL photodetector was reported by Schmidt et al [219] in 2017 using a P þ N À Ga-based T2SL barrier structure with a cut-off wavelength of %4.7 μm achieved at 77 K. A very low dark current density (J ~2.6 Â 10 À10 A cm À2 ) was achieved under an applied bias of 100 mV. In contrast, nonbarriers, Ga-free T2SL exhibit a slightly higher dark current density compared to Ga-based T2SL with dark current density is in the range of 10 À3 -10 À5 A cm À2 (with some higher/lower outliers) at an applied bias of 10-300 mV at the same operating temperatures.…”

Section: Dark Current Densitymentioning

confidence: 99%

“…[83] Generally, the best performing T2SL PDs with low dark current densities are achieved using barrier structures that are roughly four to five orders of magnitude higher than "Rule 07" at low operating temperatures (70-99 K) in the MWIR range. The variation in dark current density performance, due to changes in b) from 150 to 170 K for barrier Ga-free, [22,57,82,83,129,[144][145][146][147][148][160][161][162][163]166,192,223,224] nonbarrier Ga-free, [118,130,167,[220][221][222]225] barrier Gabased, [87,149,168,170,172,[174][175][176]183,193,219,[226][227][228] and nonbarrier Ga-based [68,101,108,111,173,[1...…”

Section: Dark Current Densitymentioning

confidence: 99%

“…Figure 11. Collected data of dark current density versus cut-off wavelength in the MWIR regime at two different temperature ranges a) from 70 to 99 K and b) from 150 to 170 K for barrier Ga-free,[22,57,82,83,129,[144][145][146][147][148][160][161][162][163]166,192,223,224] nonbarrier Ga-free,[118,130,167,[220][221][222]225] barrier Gabased,[87,149,168,170,172,[174][175][176]183,193,219,[226][227][228] and nonbarrier Ga-based[68,101,108,111,173,[177][178][179]181,…”

mentioning

confidence: 99%

See 1 more Smart Citation

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

View full text Add to dashboard Cite

Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

show abstract

“…21 Commonly, the Molecular Beam Epitaxy (MBE) technique has been used in the construction of multilayer systems since the epitaxial relationship between the crystalline orientation of the substrate and the crystalline formation of the layer guarantees the electronic properties of the devices. [25][26][27] Therefore, the study of the morphological and structural features of interface layers is an essential factor, because breaking the translational and inversion symmetry is the cause of several electronic effects that produce consequences in functional properties. 28 The layer-layer coupling capability is relevant for the development of the CMOS technology, based on the integration between III-V compounds and Si.…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Calderón

Dussán

2021

J. Electron. Mater.

View full text Add to dashboard Cite

This work presents a study of the morphological and structural properties of GaSb and GaSb/Mn thin films as support for the construction of GaSb/Mn multilayer systems deposited on Si (001) wafer substrate for electronic and spintronic applications. Thin films were obtained through DC magnetron sputtering, and the GaSb thin film was subjected to high-vacuum annealing for 2 h, 4 h, 6 h, 8 h and 10 h. The morphological properties were studied by SEM micrographs. It was observed that the width of depression regions on the GaSb thin film surface decreased (from ~ 617 nm to ~ 56 nm) when the annealing time was increased. A fast Fourier transform filter allowed identifying the formation of grains on the surface of the sample. The dependence of the grain size on the annealing times was described through the abnormal model. XRD measurements and the Burke-Turnbull model were used for establishing the dependence between GaSb crystallite size and annealing times. From Auger spectra, it was possible to determine the Ga diffusion process, its high mobility in the GaSb matrix, and its relationship with morphological properties. It was observed that the thermal processes favor the GaSb phase formation and the increase of grain size on the surface of the sample. AFM micrographs showed the topographical characteristics of the GaSb thin films surface and MFM images presented an exploration of the magnetic behavior for the bilayer system. Loops in hysteresis at 50 K were observed through measurements of the vibrating sample magnetometer, for the [GaSb/Mn] 3 sample fabricated at room temperature (T s = 300 K). These loops have been attributed to the magnetic anisotropy conditions generate through unbalanced Mn magnetic moments due to the Mn antiferromagnetic property presented at this temperature and the diffuse interfaces between GaSb and Mn layers. Lastly, the study of morphological properties of single-layer GaSb and its dependence on annealing times allowed determining that GaSb/Mn multilayer systems fabricated at room temperature present diffuse interfaces, although with clearly distinguished layers, and represent an alternative option for their fabrication.

show abstract

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

Cited by 15 publications

References 26 publications

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Contact Info

Product

Resources

About