Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

Bryantseva, T. A.; Lybchenko, D. V.; Lybchenko, V. E.; Markov, I. A.; Markov, R. I.

doi:10.1134/s1063782614020067

Cited by 7 publications

(1 citation statement)

References 4 publications

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“…Some scholars have researched the chemical and physical properties of the photosensitive materials under microwave irradiation such as the mass transfer of gallium arsenide (GaAs) surface layers under the action of lowintensity microwave irradiation [16], the modification of the defect structure in binary semiconductors under the action of microwave irradiation [17], and the relationship between microwave irradiation time and integrated photoluminescence intensity of CdTe:Cl single crystals [18]. Furthermore, for the optical properties of photosensitive semiconductors under microwave irradiation, many studies have revealed that there is a non-linear relationship between microwave irradiation time and optical properties [19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Microwave Characteristics Analysis of Typical Photosensitive Material InP Under Weak Light Irradiation Based on Quasi-Optical Resonator

Gao

et al. 2020

Electron. Mater. Lett.

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In this paper, the microwave characteristics of typical photosensitive material InP under different light irradiation are studied. The measurement sensor is a reflection-type hemispherical quasi-optical resonator with an operating frequency range from 20 to 40 GHz, an operating mode of TEM 00q , and a quality factor of 18,000 or more. For the short-time irradiation experiment, the variation of InP microwave characteristics with the irradiation power of 20 mW, 60 mW, 100 mW, and 200 mW, is studied by frequency-domain and time-domain scanning methods, respectively. The measurement results indicate that the microwave characteristics of InP change significantly even under weak light irradiation. Taking 100 mW and 200 mW irradiation power as examples, the long-time irradiation experiment performed on InP lasting 1.5 min is carried out. The measurement result curves clearly show the influence of the thermal and non-thermal effects on the InP microwave characteristics at the instant of the monochrome light source opening and closing and during irradiation. Furthermore, the temperature distribution of InP during 200 mW irradiation is real-time imaged by a thermal infrared imager to verify the existence of thermal effect during irradiation. The measurement results are in good agreement with the theoretical analysis.

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